Flexoelectric MEMS: towards an electromechanical strain diode

Nanoscale - Tập 8 Số 3 - Trang 1293-1298
Umesh Kumar Bhaskar1,2,3, Nirupam Banerjee4,5,6, Amir Abdollahi1,2,3, E. Solanas7,8,9, Guus Rijnders4,5,6, Gustau Catalán10,1,2,3,11
108193 Bellaterra, Spain
2CSIC and The Barcelona Institute of Science and Technology (BIST)
3ICN2 – Institut Catala de Nanociencia i Nanotecnologia
47500 AE Enschede, The Netherlands
5Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, the Netherlands
6University of Twente,
7CH-1015 Lausanne, Switzerland
8Lyncée Tec SA
9PSE-A
1008010 Barcelona, Spain
11ICREA - Institucio Catalana de Recerca i Estudis Avançats

Tóm tắt

Ferroelectric nanocantilevers function as switchable “strain diodes”: their electromechanical response is enhanced when ferroelectricity and flexoelectricity are parallel, and diminished or even suppressed when they are antiparallel.

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