First principle calculations of hydrogen in aluminium arsenide

Solid State Communications - Tập 83 - Trang 317-322 - 1992
L. Pavesi1
1Dipartimento di Fisica, Università di Trento I-38050 Povo (Trento-Italy

Tài liệu tham khảo

Pankove, 1991, Hydrogen in Semiconductors, vol. 34 Pearton, 1992, Hydrogen in Crystalline Semiconductors, vol. 16 van de Walle, 1989, Phys. Rev. B, 39, 10791, 10.1103/PhysRevB.39.10791 Estreicher, 1989, Phys. Rev. B, 40, 8545, 10.1103/PhysRevB.40.5739 Briddon, 1990, Phys. Rev. Lett., 64, 2535, 10.1103/PhysRevLett.64.2535 Chang, 1989, Phys. Rev. B, 40, 11644, 10.1103/PhysRevB.40.11644 Pavesi, 1992, Phys. Rev. B Pavesi, 1992, Hydrogen passivation of impurity states and defects in AlGaAs Pavesi, 1989, Appl. Phys. Lett., 55, 475, 10.1063/1.101857 Tuncel, 1992, Materials Science Forum, 83–87, 635, 10.4028/www.scientific.net/MSF.83-87.635 U. van Barth and R. Car, unpublished. Andreoni, 1989, Band Structure Engineering in Semiconductor Microstructures, Vol. 189 Ceperley, 1980, Phys. Rev. Lett., 45, 566, 10.1103/PhysRevLett.45.566 Perdew, 1981, Phys. Rev. B, 23, 5048, 10.1103/PhysRevB.23.5048 Fu, 1983, Phys. Rev. B, 28, 5480, 10.1103/PhysRevB.28.5480 Hellmann, 1937 Feynman, 1939, Phys. Rev., 56, 340, 10.1103/PhysRev.56.340 Press, 1986 Ihm, 1981, Phys. Rev. B, 24, 4191, 10.1103/PhysRevB.24.4191 Pavesi, 1990, Phys. Rev. B, 42, 1864, 10.1103/PhysRevB.42.1864 Pavesi, 1991, Phys. Rev. B, 43, 2446, 10.1103/PhysRevB.43.2446 Buonapasta, 1990, Phys. Rev. B, 42, 3175, 10.1103/PhysRevB.42.3175 Baraff, 1980, Phys. Rev. B, 21, 5662, 10.1103/PhysRevB.21.5662 Pavesi, 1991, Physica, B 170, 392, 10.1016/0921-4526(91)90151-4 Chadi, 1989, Phys. Rev. B, 39, 10063, 10.1103/PhysRevB.39.10063 Bourgoin, 1990, Physics of DX Centers in GaAs Alloys, vol. 10 Denteneer, 1990, Phys. Rev. B, 41, 3885, 10.1103/PhysRevB.41.3885