First investigation of metal–insulator–metal (MIM) capacitor using Pr2O3 dielectrics

Armacost M, Augustin A, Felsner P, Feng Y, Friese G, Heidenreich J, Hueckel G, Prigge O. IEDM Tech Dig 2000;157–60. Zurcher P, Alluri P, Chu P, Duvallet A, Happ C, Henderson R, Mendonca J, Kim M, Petras M, Raymond M, Remmel T, Roberts D, Steimle B, Stipanuk J, Straub S, Sparks T, Tarabbia M, Thibieroz H, Miller M, IEDM Tech Dig 2000;153–60. Babcock, 2001, IEEE Electron Device Lett, 22, 230, 10.1109/55.919238 Chen, 2002, IEEE Electron Device Lett, 23, 185, 10.1109/55.992833 Hu, 2002, IEEE Electron Device Lett, 23, 514, 10.1109/LED.2002.1004230 Lee, 2003, Appl Phys Lett, 82, 2874, 10.1063/1.1569985 Ishikawa T, Kodama D, Matsui Y, Hiratani M, Furusawa T, Hisamoto D. IEDM Tech Dig 2002;940–2. Jeon, 2003, J Appl Phys, 93, 6393, 10.1063/1.1569028 Lütkehoff, 1995, Phys Rev B, 52, 13808, 10.1103/PhysRevB.52.13808 Thangadurai, 2001, J Solid State Electrochem, 5, 531, 10.1007/s100080000187