Filament-free memristors for computing

Nano Convergence - Tập 10 Số 1
Sung Chul Choi1, Taehwan Moon1, Gunuk Wang2, J. Joshua Yang1
1Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, 90089, USA
2KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea

Tóm tắt

AbstractMemristors have attracted increasing attention due to their tremendous potential to accelerate data-centric computing systems. The dynamic reconfiguration of memristive devices in response to external electrical stimuli can provide highly desirable novel functionalities for computing applications when compared with conventional complementary-metal–oxide–semiconductor (CMOS)-based devices. Those most intensively studied and extensively reviewed memristors in the literature so far have been filamentary type memristors, which typically exhibit a relatively large variability from device to device and from switching cycle to cycle. On the other hand, filament-free switching memristors have shown a better uniformity and attractive dynamical properties, which can enable a variety of new computing paradigms but have rarely been reviewed. In this article, a wide range of filament-free switching memristors and their corresponding computing applications are reviewed. Various junction structures, switching properties, and switching principles of filament-free memristors are surveyed and discussed. Furthermore, we introduce recent advances in different computing schemes and their demonstrations based on non-filamentary memristors. This Review aims to present valuable insights and guidelines regarding the key computational primitives and implementations enabled by these filament-free switching memristors.

Từ khóa


Tài liệu tham khảo

G. Moore, Electron. Mag. 38, 114 (1965)

R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous, A.R. Leblanc, IEEE J. Solid-State Circuits 9, 256 (1974)

B.G. Streetman, S.K. Banerjee, Solid state electronic devices, 7th edn. (Pearson, New Jersey, 2000)

S. Borkar, A.A. Chien, Commun. ACM 54, 67 (2011)

Texas Instruments, SCAA035B (1997).

M. Bohr, IEEE Solid-State Circuits Newsletter 12, 11 (2007)

H. Iwai, 16th international workshop on junction technology (IEEE, Shanghai, 2016)

T.N. Theis, H.S. Philip Wong, Comput. Sci. Eng. 19, 41 (2017)

M. Horowitz, Dig Tech Pap IEEE Int Solid State Circuits Conf (IEEE, San Francisco, 2014), pp.10–14

H. Esmaeilzadehy, E. Blemz, R. St. Amantx, K. Sankaralingamz, D. Burgerfi, in The 38th Annual International Symposium on Computer Architecture (2011), pp. 365–376.

J.J. Yang, D.B. Strukov, D.R. Stewart, Nat. Nanotechnol. 8, 13 (2013)

D. Ielmini, H.S.P. Wong, Nat. Electron 1, 333 (2018)

M.A. Zidan, J.P. Strachan, W.D. Lu, Nat. Electron 1, 22 (2018)

Q. Xia, J.J. Yang, Nat. Mater. 18, 309 (2019)

S. Choi, J. Yang, G. Wang, Adv. Mater. 32, 2004659 (2020)

S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J.J. Yang, Q. Xia, Nat. Nanotechnol. 14, 35 (2019)

B. Govoreanu, G. S. Kar, Y. Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, M. Jurczak, in 2011 International Electron Devices Meeting (IEDM) (2011), pp. 729–732.

A.C. Torrezan, J.P. Strachan, G. Medeiros-Ribeiro, R.S. Williams, Nanotechnology 22, 485203 (2011)

M.-J. Lee, C.B. Lee, D. Lee, S.R. Lee, M. Chang, J.H. Hur, Y.-B. Kim, C.J. Kim, D.H. Seo, S. Seo, U.-I. Chung, I.-K. Yoo, K. Kim, Nat. Mater. 10, 625 (2011)

M. Hu, C.E. Graves, C. Li, Y. Li, N. Ge, E. Montgomery, N. Davila, H. Jiang, R.S. Williams, J.J. Yang, Q. Xia, J.P. Strachan, Adv. Mater. 30, 1705914 (2018)

F. Zhou, Y. Chai, Nat. Electron 3, 664 (2020)

D. Lee, M. Park, Y. Baek, B. Bae, J. Heo, K. Lee, Nat. Commun. 13, 5223 (2022)

L. Sun, Z. Wang, J. Jiang, Y. Kim, B. Joo, S. Zheng, S. Lee, W.J. Yu, B.S. Kong, H. Yang, Sci. Adv. 7, 1455 (2021)

P. Yao, H. Wu, B. Gao, J. Tang, Q. Zhang, W. Zhang, J.J. Yang, H. Qian, Nature 577, 641 (2020)

X. Wang, R. Pinkham, M.A. Zidan, F.H. Meng, M.P. Flynn, Z. Zhang, W.D. Lu, IEEE Trans. Circuits Syst. II Express Briefs 69, 559 (2022)

M. Prezioso, F. Merrikh-Bayat, B.D. Hoskins, G.C. Adam, K.K. Likharev, D.B. Strukov, Nature 521, 61 (2015)

S. Choi, J.H. Shin, J. Lee, P. Sheridan, W.D. Lu, Nano Lett. 17, 3113 (2017)

Y.J. Jeong, J. Lee, J. Moon, J.H. Shin, W.D. Lu, Nano Lett. 18, 4447 (2018)

K. Wang, Q. Hu, B. Gao, Q. Lin, F.W. Zhuge, D.Y. Zhang, L. Wang, Y.H. He, R.H. Scheicher, H. Tong, X.S. Miao, Mater. Horiz. 8, 619 (2021)

C. Du, F. Cai, M.A. Zidan, W. Ma, S.H. Lee, W.D. Lu, Nat. Commun. 8, 2204 (2017)

Y. Zhong, J. Tang, X. Li, B. Gao, H. Qian, H. Wu, Nat. Commun. 12, 408 (2021)

Y. Zhong, J. Tang, X. Li, X. Liang, Z. Liu, Y. Li, Y. Xi, P. Yao, Z. Hao, B. Gao, H. Qian, H. Wu, Nat. Electron 5, 672 (2022)

P.Y. Chen, X. Peng, S. Yu, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 37, 3067 (2018)

S. Yu, Neuro-inspired computing using resistive synaptic devices (Springer International Publishing, Berlin, 2017)

M. Zhao, B. Gao, J. Tang, H. Qian, H. Wu, Appl. Phys. Rev. 7, 011301 (2020)

R. Waser, R. Dittmann, C. Staikov, K. Szot, Adv. Mater. 21, 2632 (2009)

A. Sawa, R. Meyer, Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications (Wiley-VCH, Weinheim, 2016), pp.457–482

S.G. Kim, J.S. Han, H. Kim, S.Y. Kim, H.W. Jang, Adv. Mater. Technol. 3, 1800457 (2018)

S. Bagdzevicius, K. Maas, M. Boudard, M. Burriel, Resistive switching: oxide materials, mechanisms, devices and operations (Springer, Cham, 2022), pp.235–287

P. Bousoulas, I. Michelakaki, E. Skotadis, M. Tsigkourakos, D. Tsoukalas, IEEE Trans. Electron Devices 64, 3151 (2017)

G. Wang, A.R.O. Raji, J.H. Lee, J.M. Tour, ACS Nano 8, 1410 (2014)

M.J. Yun, K.H. Kim, S. Kim, H.-D. Kim, J. Nanosci. Nanotechnol. 18, 5947 (2018)

A. Kumar, S. Mukherjee, A. Kranti, J. Phys. D Appl. Phys. 51, 405601 (2018)

G. Wang, Y. Yang, J.-H. Lee, V. Abramova, H. Fei, G. Ruan, E.L. Thomas, J.M. Tour, Nano Lett. 14, 4694 (2014)

J. Guo, S. Ren, L. Wu, X. Kang, W. Chen, X. Zhao, Appl. Surf. Sci. 434, 1074 (2018)

D. Ielmini, V. Milo, J. Comput. Electron. 16, 1121 (2017)

M. Khalid, Trans. Electr. Electron. Mater. 20, 289 (2019)

D. Panda, P.P. Sahu, T.Y. Tseng, Nanoscale Res. Lett. 13, 8 (2018)

M. Lanza, H.S.P. Wong, E. Pop, D. Ielmini, D. Strukov, B.C. Regan, L. Larcher, M.A. Villena, J.J. Yang, L. Goux, A. Belmonte, Y. Yang, F.M. Puglisi, J. Kang, B. Magyari-Köpe, E. Yalon, A. Kenyon, M. Buckwell, A. Mehonic, A. Shluger, H. Li, T.H. Hou, B. Hudec, D. Akinwande, R. Ge, S. Ambrogio, J.B. Roldan, E. Miranda, J. Suñe, K.L. Pey, X. Wu, N. Raghavan, E. Wu, W.D. Lu, G. Navarro, W. Zhang, H. Wu, R. Li, A. Holleitner, U. Wurstbauer, M.C. Lemme, M. Liu, S. Long, Q. Liu, H. Lv, A. Padovani, P. Pavan, I. Valov, X. Jing, T. Han, K. Zhu, S. Chen, F. Hui, Y. Shi, Adv. Electron Mater. 5, 1800143 (2019)

J. Lee, W.D. Lu, Adv. Mater. 30, 1702770 (2018)

W. Sun, B. Gao, M. Chi, Q. Xia, J.J. Yang, H. Qian, H. Wu, Nat. Commun. 10, 3453 (2019)

X. Zhang, A. Huang, Q. Hu, Z. Xiao, P.K. Chu, Phys. Status Solidi (a) 215, 1700875 (2018)

O. Krestinskaya, A.P. James, L.O. Chua, IEEE Trans. Neural Netw. Learn. Syst. 31, 4 (2020)

J. Tang, F. Yuan, X. Shen, Z. Wang, M. Rao, Y. He, Y. Sun, X. Li, W. Zhang, Y. Li, B. Gao, H. Qian, G. Bi, S. Song, J.J. Yang, H. Wu, Adv. Mater. 31, 1902761 (2019)

H. Liu, Y. Qin, H.Y. Chen, J. Wu, J. Ma, Z. Du, N. Wang, J. Zou, S. Lin, X. Zhang, Y. Zhang, H. Wang, Adv. Mater. 35, 2205047 (2023)

Y. Aoki, C. Wiemann, V. Feyer, H.S. Kim, C.M. Schneider, H. Ill-Yoo, M. Martin, Nat. Commun. 5, 3473 (2014)

S.O. Park, H. Jeong, J. Park, J. Bae, S. Choi, Nat. Commun. 13, 2888 (2022)

Y. Li, E.J. Fuller, J.D. Sugar, S. Yoo, D.S. Ashby, C.H. Bennett, R.D. Horton, M.S. Bartsch, M.J. Marinella, W.D. Lu, A.A. Talin, Adv. Mater. 32, 2003984 (2020)

J.Q. Yang, R. Wang, Z.P. Wang, Q.Y. Ma, J.Y. Mao, Y. Ren, X. Yang, Y. Zhou, S.T. Han, Nano Energy 74, 104828 (2020)

J.J. Yang, M.D. Pickett, X. Li, D.A.A. Ohlberg, D.R. Stewart, R.S. Williams, Nat. Nanotechnol. 3, 429 (2008)

S. Kunwar, C. Bennett Somodi, R.A. Lalk, B.X. Rutherford, Z. Corey, P. Roy, D. Zhang, M. Hellenbrand, M. Xiao, J.L. MacManus-Driscoll, Q. Jia, H. Wang, J. Joshua Yang, W. Nie, A. Chen, S. Kunwar, C.B. Somodi, R.A. Lalk, B.X. Rutherford, D. Zhang, W. Nie, A. Chen, H. Wang, Z. Corey, P. Roy, Q.X. Jia, M. Hellenbrand, M. Xiao, J.L. MacManus-Driscoll, Adv. Electron Mater. 9, 2200816 (2023)

A. Sawa, Mater. Today 11, 28 (2008)

S. Choi, S. Jang, J.H. Moon, J.C. Kim, H.Y. Jeong, P. Jang, K.J. Lee, G. Wang, NPG Asia Mater. 10, 1097 (2018)

C. Lambert-Mauriat, V. Oison, L. Saadi, K. Aguir, Surf. Sci. 606, 40 (2012)

D.C. Look, K.D. Leedy, L. Vines, B.G. Svensson, A. Zubiaga, F. Tuomisto, D.R. Doutt, L.J. Brillson, Phys. Rev. B 84, 115202 (2011)

Z. Wang, T. Zeng, Y. Ren, Y. Lin, H. Xu, X. Zhao, Y. Liu, D. Ielmini, Nat. Commun. 11, 1510 (2020)

Y. Lin, F. Meng, T. Zeng, Q. Zhang, Z. Wang, Y. Cheng, X. Zhao, L. Gu, H. Xu, Y. Liu, Adv. Funct. Mater. 33, 2302787 (2023)

S.M. Sze, Y. Li, K.K. Ng, Physics of semiconductor devices, 4th edn. (John Wiley & Sons, Hoboken, 2021)

P.S. Ioannou, E. Kyriakides, O. Schneegans, J. Giapintzakis, Sci. Rep. 10, 8711 (2020)

H. Tian, M.Z. Bazant, Nano Lett. 22, 5866 (2022)

V.H. Mai, A. Moradpour, P.A. Senzier, C. Pasquier, K. Wang, M.J. Rozenberg, J. Giapintzakis, C.N. Mihailescu, C.M. Orfanidou, E. Svoukis, A. Breza, C.B. Lioutas, S. Franger, A. Revcolevschi, T. Maroutian, P. Lecoeur, P. Aubert, G. Agnus, R. Salot, P.A. Albouy, R. Weil, D. Alamarguy, K. March, F. Jomard, P. Chrétien, O. Schneegans, Sci. Rep. 5, 7761 (2015)

Y. Choi, C. Lee, M. Kim, Y. Song, H. Hwang, D. Lee, IEEE Electron Device Lett. 40, 1992 (2019)

B. Zivasatienraj, M. Brooks Tellekamp, A.S. Weidenbach, A. Ghosh, T.M. McCrone, W. Alan Doolittle, J. Appl. Phys. 127, 084501 (2020)

I. Riess, Handbook of solid state electrochemistry (CRC Press, Boca Raton, 2019), pp.223–268

E.V. Dydek, B. Zaltzman, I. Rubinstein, D.S. Deng, A. Mani, M.Z. Bazant, Phys. Rev. Lett. 107, 118301 (2011)

A. Mani, T.A. Zangle, J.G. Santiago, Langmuir 25, 3898 (2009)

T.A. Zangle, A. Mani, J.G. Santiago, Langmuir 25, 3909 (2009)

M.Z. Bazant, Acc. Chem. Res. 46, 1144 (2013)

Y. Liu, J. Lian, Z. Sun, M. Zhao, Y. Shi, H. Song, Chem. Phys. Lett. 677, 114 (2017)

B.J. Morgan, J. Carrasco, G. Teobaldi, J. Mater. Chem. A Mater. 4, 17180 (2016)

E.J. Fuller, Y. Li, C. Bennet, S.T. Keene, A. Melianas, S. Agarwal, M.J. Marinella, A. Salleo, A.A. Talin, IBM J. Res. Dev. 63, 1 (2019)

H. Tian, J. Li, M.Z. Bazant, Adv. Funct. Mater. 33, 2213621 (2023)

Y. Yu, C. Wang, C. Jiang, I. Abrahams, Z. Du, Q. Zhang, J. Sun, X. Huang, Appl. Surf. Sci. 485, 222 (2019)

D.S. Shang, L. Shi, J.R. Sun, B.G. Shen, F. Zhuge, R.W. Li, Y.G. Zhao, Appl. Phys. Lett. 96, 072103 (2010)

L. Wu, H. Liu, J. Lin, S. Wang, IEEE Trans. Electron Devices 68, 1622 (2021)

X. Zou, H.G. Ong, L. You, W. Chen, H. Ding, H. Funakubo, L. Chen, J. Wang, AIP Adv. 2, 032166 (2012)

L. Hu, J. Yang, J. Wang, P. Cheng, L.O. Chua, F. Zhuge, Adv. Funct. Mater. 31, 2005582 (2021)

Y. Tian, L. Jiang, X. Zhang, G. Zhang, Q. Zhu, AIP Adv. 8, 035105 (2018)

K.M. Kim, J. Zhang, C. Graves, J.J. Yang, B.J. Choi, C.S. Hwang, Z. Li, R.S. Williams, Nano Lett. 16, 6724 (2016)

G. Kim, S. Son, H. Song, J.B. Jeon, J. Lee, H. Cheong, S. Choi, K.M. Kim, G. Kim, S. Son, H. Song, J.B. Jeon, W.H. Cheong, K.M. Kim, S. Choi, Adv. Sci. 10, 2205654 (2023)

J.R. Nicholls, S. Dimitrijev, P. Tanner, J. Han, IEEE Trans. Electron Devices 66, 1675 (2019)

A. Rose, Phys. Rev. 97, 1538 (1955)

S. Saitoh, K. Kinoshita, Appl. Phys. Lett. 116, 112101 (2020)

F.C. Chiu, H.W. Chou, J.Y.-M. Lee, J. Appl. Phys. 97, 103503 (2005)

M.A. Lampert, P. Mark, Current injection in solids (Academic Press, Cambridge, 1970)

S.M. Sze, J. Appl. Phys. 38, 2951 (1967)

H. Schroeder, V.V. Zhirnov, R.K. Cavin, R. Waser, J. Appl. Phys. 107, 054517 (2010)

J.F. Scott, C.A. De Pax Araujo, Science 246, 1400 (1989)

L.W. Martin, A.M. Rappe, Nat. Rev. Mater. 2, 16087 (2017)

S. Oh, H. Hwang, I.K. Yoo, APL Mater. 7, 91109 (2019)

Z. Wen, D. Wu, Adv. Mater. 32, 1904123 (2019)

S.S. Cheema, N. Shanker, C.H. Hsu, A. Datar, J. Bae, D. Kwon, S. Salahuddin, Adv. Electron Mater. 8, 2100499 (2022)

A. Chanthbouala, V. Garcia, R.O. Cherifi, K. Bouzehouane, S. Fusil, X. Moya, S. Xavier, H. Yamada, C. Deranlot, N.D. Mathur, M. Bibes, A. Barthélémy, J. Grollier, Nat. Mater. 11, 860 (2012)

R. Berdan, T. Marukame, K. Ota, M. Yamaguchi, M. Saitoh, S. Fujii, J. Deguchi, Y. Nishi, Nat. Electron 3, 259 (2020)

J. Wu, H.-Y. Chen, N. Yang, J. Cao, X. Yan, F. Liu, Q. Sun, X. Ling, J. Guo, H. Wang, Nat. Electron 3, 466 (2020)

C. Ma, Z. Luo, W. Huang, L. Zhao, Q. Chen, Y. Lin, X. Liu, Z. Chen, C. Liu, H. Sun, X. Jin, Y. Yin, X. Li, Nat. Commun. 11, 1439 (2020)

Z. Luo, Z. Wang, Z. Guan, C. Ma, L. Zhao, C. Liu, H. Sun, H. Wang, Y. Lin, X. Jin, Y. Yin, X. Li, Nat. Commun. 13, 699 (2022)

T. Moon, H.J. Lee, S. Nam, H. Bae, D.-H. Choe, S. Jo, Y.S. Lee, Y. Park, J.J. Yang, J. Heo, Neuromorphic Comput. Eng. 3, 024001 (2023)

L. Wang, M.R. Cho, Y.J. Shin, J.R. Kim, S. Das, J.-G. Yoon, J.-S. Chung, T.W. Noh, Nano Lett. 16, 3911 (2016)

L. Chen, T.-Y. Wang, Y.-W. Dai, M.-Y. Cha, H. Zhu, Q.-Q. Sun, J. Ding, P. Zhou, L. Chua, D.W. Zhang, Nanoscale 10, 15826 (2018)

V. Mikheev, A. Chouprik, Y. Lebedinskii, S. Zarubin, A.M. Markeev, A.V. Zenkevich, D. Negrov, Nanotechnology 31, 215205 (2020)

B. Max, M. Hoffmann, H. Mulaosmanovic, S. Slesazeck, T. Mikolajick, ACS Appl. Electron. Mater. 2, 4023 (2020)

E. Covi, Q. T. Duong, S. Lancaster, V. Havel, J. Coignus, J. Barbot CEA, O. Richter, P. Klein, E. Chicca, L. Grenouillet, A. Dimoulas, T. Mikolajick, S. Slesazeck, in 2021 IEEE International Symposium on Circuits and Systems (2021).

V. Garcia, M. Bibes, Nat. Commun. 5, 4289 (2014)

B. Max, M. Hoffmann, S. Slesazeck, T. Mikolajick, IEEE J. Electron Dev. Soc. 7, 1175 (2019)

O. Ağırseven, P. Biswas, J. Tate, J. Mater. Res. 37, 1135 (2022)

M. Sachs, E. Pastor, A. Kafizas, J.R. Durrant, J. Phys. Chem. Lett. 7, 3742 (2016)

D. Li, B. Wu, X. Zhu, J. Wang, B. Ryu, W.D. Lu, W. Lu, X. Liang, ACS Nano 12, 9240 (2018)

X. Zhu, D. Li, X. Liang, W.D. Lu, Nat. Mater. 18, 141 (2019)

F. Zhang, H. Zhang, S. Krylyuk, C.A. Milligan, Y. Zhu, D.Y. Zemlyanov, L.A. Bendersky, B.P. Burton, A.V. Davydov, J. Appenzeller, Nat. Mater. 18, 55 (2018)

P. Cheng, K. Sun, Y.H. Hu, Nano Lett. 16, 572 (2016)

Q. Lu, B. Yildiz, Nano Lett. 16, 1186 (2016)

H.Y. Lo, C.Y. Yang, G.M. Huang, C.Y. Huang, J.Y. Chen, C.W. Huang, Y.H. Chu, W.W. Wu, Nano Energy 72, 104683 (2020)

X. Mou, J. Tang, Y. Lyu, Q. Zhang, S. Yang, F. Xu, W. Liu, M. Xu, Y. Zhou, W. Sun, Y. Zhong, B. Gao, P. Yu, H. Qian, H. Wu, Sci. Adv. 7, 648 (2021)

J. Rao, Z. Fan, L. Hong, S. Cheng, Q. Huang, J. Zhao, X. Xiang, E.J. Guo, H. Guo, Z. Hou, Y. Chen, X. Lu, G. Zhou, X. Gao, J.M. Liu, Mater. Today Phys. 18, 100392 (2021)

Z. Wang, H.M. Huang, X. Guo, Adv. Electron Mater. 7, 2001243 (2021)

N.F. Mott, Can. J. Phys. 34, 1356 (1956)

N.F. Mott, Rev. Mod. Phys. 40, 677 (1968)

P. Limelette, A. Georges, D. Jérome, P. Wzietek, P. Metcalf, J.M. Honig, Science 302, 89 (2003)

S.K. Nandi, E. Puyoo, S.K. Nath, D. Albertini, N. Baboux, S.K. Das, T. Ratcliff, R.G. Elliman, ACS Appl. Mater. Interfaces 14, 29025 (2022)

T.D. Brown, S.M. Bohaichuk, M. Islam, S. Kumar, E. Pop, R.S. Williams, Adv. Mater. 35, 2205451 (2022)

I. Leonov, A.O. Shorikov, V.I. Anisimov, I.A. Abrikosov, Phys. Rev. B 101, 245144 (2020)

S. Lupi, L. Baldassarre, B. Mansart, A. Perucchi, A. Barinov, P. Dudin, E. Papalazarou, F. Rodolakis, J.P. Rueff, J.P. Itié, S. Ravy, D. Nicoletti, P. Postorino, P. Hansmann, N. Parragh, A. Toschi, T. Saha-Dasgupta, O.K. Andersen, G. Sangiovanni, K. Held, M. Marsi, Nat. Commun. 1, 105 (2010)

E. Greenberg, I. Leonov, S. Layek, Z. Konopkova, M.P. Pasternak, L. Dubrovinsky, R. Jeanloz, I.A. Abrikosov, G.K. Rozenberg, Phys. Rev. X 8, 031059 (2018)

K. Tsubaki, A. Tsurumaki-Fukuchi, T. Katase, T. Kamiya, M. Arita, Y. Takahashi, K. Tsubaki, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, T. Katase, T. Kamiya, Adv Electron Mater 9, 2201303 (2023)

Y. Wang, M. Kim, C. Lee, A.S. Chabungbam, J. Kim, J. Lee, H.S. Lee, Q. Shao, H. Sohn, H.H. Park, Appl. Mater. Today 26, 101395 (2022)

W.L. Lim, E.J. Moon, J.W. Freeland, D.J. Meyers, M. Kareev, J. Chakhalian, S. Urazhdin, Appl. Phys. Lett. 101, 143111 (2012)

C. Oh, S. Heo, H.M. Jang, J. Son, Cit. Appl. Phys. Lett. 108, 122106 (2016)

K. Ramadoss, F. Zuo, Y. Sun, Z. Zhang, J. Lin, U. Bhaskar, S. Shin, M.A. Alam, S. Guha, D. Weinstein, S. Ramanathan, IEEE Electron Device Lett. 39, 1500 (2018)

A. Biswas, K.-S. Kim, Y.H. Jeong, Perovskite materials: synthesis, characterisation, properties, and applications (IntechOpen, London, 2016)

L. Wang, Q. Zhang, L. Chang, L. You, X. He, K. Jin, L. Gu, H. Guo, C. Ge, Y. Feng, J. Wang, Adv. Electron Mater. 3, 1700321 (2017)

Y. Wang, M. Kim, A.S. Chabungbam, D. Kim, Q. Shao, I. Kymissis, H.H. Park, Scr. Mater. 222, 115050 (2023)

T.C. Südhof, Neuron 80, 675 (2013)

S.J. Martin, P.D. Grimwood, R.G.M. Morris, Annu. Rev. Neurosci. 23, 649 (2000)

J.C. Magee, C. Grienberger, Annu. Rev. Neurosci. 43, 95 (2020)

K.D. Miller, Neuron 17, 371 (1996)

Z. Wang, S. Joshi, S. Savel’Ev, W. Song, R. Midya, Y. Li, M. Rao, P. Yan, S. Asapu, Y. Zhuo, H. Jiang, P. Lin, C. Li, J.H. Yoon, N.K. Upadhyay, J. Zhang, M. Hu, J.P. Strachan, M. Barnell, Q. Wu, H. Wu, R.S. Williams, Q. Xia, J.J. Yang, Nat. Electron. 1, 137 (2018)

Y. Zhang, Z. Wang, J. Zhu, Y. Yang, M. Rao, W. Song, Y. Zhuo, X. Zhang, M. Cui, L. Shen, R. Huang, J.J. Yang, Appl. Phys. Rev. 7, 011308 (2020)

G. Neves, S.F. Cooke, T.V.P. Bliss, Nat. Rev. Neurosci. 9, 65 (2008)

E.R. Kandel, J.D. Koester, S.H. Mack, S.A. Siegelbaum, Principles of neural science, 6th edn. (McGraw-Hill, New York, 2021)

W. Yi, K.K. Tsang, S.K. Lam, X. Bai, J.A. Crowell, E.A. Flores, Nat. Commun. 9, 4661 (2018)

P. Stoliar, J. Tranchant, B. Corraze, E. Janod, M.P. Besland, F. Tesler, M. Rozenberg, L. Cario, Adv. Funct. Mater. 27, 1604740 (2017)

S. Lashkare, S. Chouhan, T. Chavan, A. Bhat, P. Kumbhare, U. Ganguly, IEEE Electron Device Lett. 39, 484 (2018)

D. Khilwani, V. Moghe, S. Lashkare, V. Saraswat, P. Kumbhare, M. Shojaei Baghini, S. Jandhyala, S. Subramoney, U. Ganguly, APL Mater. 7, 091112 (2019)

H.M. Huang, R. Yang, Z.H. Tan, H.K. He, W. Zhou, J. Xiong, X. Guo, Adv. Mater. 31, 1803849 (2019)

S. Choi, G.S. Kim, J. Yang, H. Cho, C.Y. Kang, G. Wang, Adv. Mater. 34, 2104598 (2022)

P.J. Werbos, Proc. IEEE 78, 1550 (1990)

L. Medsker, L.C. Jain, Recurrent neural networks: design and application, 1st edn. (CRC Press, Boca Raton, 1999)

G. Tanaka, T. Yamane, J.B. Héroux, R. Nakane, N. Kanazawa, S. Takeda, H. Numata, D. Nakano, A. Hirose, Neural Netw. 115, 100 (2019)

K. Nakajima, Jpn. J. Appl. Phys. 59, 060501 (2020)

M. S. Kulkarni, C. Teuscher, in 2012 IEEE/ACM International Symposium on Nanoscale Architectures (IEEE Computer Society, 2012), pp. 226–232.

J. Moon, W. Ma, J.H. Shin, F. Cai, C. Du, S.H. Lee, W.D. Lu, Nat. Electron 2, 480 (2019)

R. Midya, Z. Wang, S. Asapu, X. Zhang, M. Rao, W. Song, Y. Zhuo, N. Upadhyay, Q. Xia, J. Joshua Yang, R. Midya, Z. Wang, S. Asapu, X. Zhang, M. Rao, W. Song, Y. Zhuo, N. Upadhyay, Q. Xia, J.J. Yang, Adv. Intell. Syst. 1, 1900084 (2019)

G. Milano, G. Pedretti, K. Montano, S. Ricci, S. Hashemkhani, L. Boarino, D. Ielmini, C. Ricciardi, Nat. Mater. 21, 195 (2021)

J.Y. Seok, S.J. Song, J.H. Yoon, K.J. Yoon, T.H. Park, D.E. Kwon, H. Lim, G.H. Kim, D.S. Jeong, C.S. Hwang, Adv. Funct. Mater. 24, 5316 (2014)

L. Shi, G. Zheng, B. Tian, B. Dkhil, C. Duan, Nanoscale Adv. 2, 1811 (2020)

F. Gül, Results Phys. 12, 1091 (2019)

J.Y. Chen, M.C. Wu, Y.H. Ting, W.C. Lee, P.H. Yeh, W.W. Wu, Scr. Mater. 187, 439 (2020)

W. Lee, J. Park, S. Kim, J. Woo, J. Shin, G. Choi, S. Park, D. Lee, E. Cha, B.H. Lee, H. Hwang, ACS Nano 6, 8166 (2012)

B.J. Choi, J. Zhang, K. Norris, G. Gibson, K.M. Kim, W. Jackson, M.-X.M. Zhang, Z. Li, J.J. Yang, R.S. Williams, Adv. Mater. 28, 356 (2016)

N.K. Upadhyay, T. Blum, P. Maksymovych, N.V. Lavrik, N. Davila, J.A. Katine, A.V. Ievlev, M. Chi, Q. Xia, J.J. Yang, Front. Nanotechnol. 3, 656026 (2021)

R.S. Shenoy, G.W. Burr, K. Virwani, B. Jackson, A. Padilla, P. Narayanan, C.T. Rettner, R.M. Shelby, D.S. Bethune, K.V. Raman, M. Brightsky, E. Joseph, P.M. Rice, T. Topuria, A.J. Kellock, B. Kurdi, K. Gopalakrishnan, Semicond. Sci. Technol. 29, 104005 (2014)

Q. Luo, X. Xu, H. Liu, H. Lv, T. Gong, S. Long, Q. Liu, H. Sun, W. Banerjee, L. Li, J. Gao, N. Lu, S. S. Chung, J. Li, M. Liu, in 2015 IEEE International Electron Devices Meeting (IEDM) (Institute of Electrical and Electronics Engineers Inc., 2015), pp. 10.2.1–10.2.4.

M. Son, J. Lee, J. Park, J. Shin, G. Choi, S. Jung, W. Lee, S. Kim, S. Park, H. Hwang, IEEE Electron Device Lett. 32, 1579 (2011)

S.K. Nandi, X. Liu, D.K. Venkatachalam, R.G. Elliman, J. Phys. D Appl. Phys. 48, 195105 (2015)

E. Cha, J. Park, J. Woo, D. Lee, A. Prakash, H. Hwang, Appl. Phys. Lett. 108, 153502 (2016)

M. Zhu, K. Ren, Z. Song, MRS Bull. 44, 715 (2019)

J. Yoo, S.H. Kim, S.A. Chekol, J. Park, C. Sung, J. Song, D. Lee, H. Hwang, Adv. Electron Mater. 5, 1900196 (2019)

H.K. Seo, J.J. Ryu, S.Y. Lee, M. Park, S.G. Park, W. Song, G.H. Kim, M.K. Yang, Adv. Electron Mater. 8, 2200161 (2022)

R. Midya, Z. Wang, J. Zhang, S.E. Savel’ev, C. Li, M. Rao, M.H. Jang, S. Joshi, H. Jiang, P. Lin, K. Norris, N. Ge, Q. Wu, M. Barnell, Z. Li, H.L. Xin, R.S. Williams, Q. Xia, J.J. Yang, Adv. Mater. 29, 1604457 (2017)

S.A. Chekol, S. Menzel, R. Waser, S. Hoffmann-Eifert, Adv. Electron Mater. 8, 2200549 (2022)

S. Choi, Y. Kim, T. Van Nguyen, W.H. Jeong, K.S. Min, B.J. Choi, Adv. Electron Mater. 7, 2100050 (2021)

K. Jeon, J. Kim, J.J. Ryu, S.J. Yoo, C. Song, M.K. Yang, D.S. Jeong, G.H. Kim, Nat. Commun. 12, 2968 (2021)

Q. Luo, X. Zhang, Y. Hu, T. Gong, X. Xu, P. Yuan, H. Ma, D. Dong, H. Lv, S. Long, Q. Liu, M. Liu, IEEE Electron Device Lett. 39, 664 (2018)

S.M. Bohte, H. La Poutré, J.N. Kok, IEEE Trans. Neural Netw. 13, 426 (2002)

D.S. Jeong, J. Appl. Phys. 124, 152002 (2018)

A. Grüning, S. M. Bohte, in 22nd European Symposium on Artificial Neural Networks, Computational Intelligence and Machine Learning (2014).

A. Solanki, A. Guerrero, Q. Zhang, J. Bisquert, T.C. Sum, J. Phys. Chem. Lett. 11, 463 (2020)

R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, D. Rinerson, in 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS) (2008), pp. 1–5.

M. Rao, W. Song, F. Kiani, S. Asapu, Y. Zhuo, R. Midya, N. Upadhyay, Q. Wu, M. Barnell, P. Lin, C. Li, Z. Wang, Q. Xia, J.J. Yang, Small Sci. 2, 2100072 (2022)

J.Y. Mao, Z. Zheng, Z.Y. Xiong, P. Huang, G.L. Ding, R. Wang, Z.P. Wang, J.Q. Yang, Y. Zhou, T. Zhai, S.T. Han, Nano Energy 71, 104616 (2020)

A.A. Koroleva, M.G. Kozodaev, Y.Y. Lebedinskii, A.M. Markeev, Nanobiotechnol. Reports 16, 737 (2021)

M. Hellenbrand, B. Bakhit, H. Dou, M. Xiao, M.O. Hill, Z. Sun, A. Mehonic, A. Chen, Q. Jia, H. Wang, J.L. MacManus-Driscoll, Sci. Adv. 9, eadg1946 (2023)

C. Cheng, C. Zhu, B. Huang, H. Zhang, H. Zhang, R. Chen, W. Pei, Q. Chen, H. Chen, Adv. Mater. Technol. 4, 1800729 (2019)

A.I. Khan, A. Keshavarzi, S. Datta, Nat. Electron. 3, 588 (2020)

T. Mikolajick, U. Schroeder, S. Slesazeck, IEEE Trans. Electron Devices 67, 1434 (2020)

U. Schroeder, M.H. Park, T. Mikolajick, C.S. Hwang, Nat. Rev. Mater. 7, 653 (2022)