Ferroelectric PZT Thin Films by Sol-Gel Deposition

Journal of Sol-Gel Science and Technology - Tập 13 - Trang 813-820 - 1998
Ian M. Reaney1, David V. Taylor2, Keith G. Brooks3
1Department of Engineering Materials, University of Sheffield, Sheffield
2Département des Materiaux Ecole Polytechnique Fédérale de Lausanne, Laboratoire de Céramique, Lausanne, Switzerland
3Département de Chimie, Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland

Tóm tắt

Sol-gel spin coating has a low ‘thermal budget’, is cheap compared to vacuum-based techniques and is now routinely used to produce dense, pore-free ferroelectric films. PbZrx Ti(1 − x)O3 (PZT) is utilized in most applications because it has a large remanent polarization, high piezo- and pyroelectric coefficients and optimized electromechanical coupling factors, depending on precise composition. This paper will review some of the principles and applications of PZT films and highlight using transmission electron microscopy some of the basic problems and solutions involved in producing device-quality material on Si-substrates.

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