Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects

ECS Journal of Solid State Science and Technology - Tập 4 Số 5 - Trang N30-N35 - 2015
Johannes Müller1, P. Polakowski1, Stefan Mueller2, Thomas Mikolajick3,2
1Fraunhofer IPMS, Dresden, Germany
2Namlab gGmbH, Dresden, Germany
3IHM, TU Dresden, Dresden, Germany

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Buck D. A. , Master Thesis, MIT, Massachusetts (1952).

10.1109/IEDM.2013.6724605

10.1063/1.1534381

10.1002/pssb.200404935

10.4028/www.scientific.net/KEM.206-213.1285

10.1063/1.1796513

10.1016/j.sse.2011.09.016

10.1063/1.2357032

10.1063/1.3634052

10.1111/j.1151-2916.1989.tb06322.x

10.1063/1.2387126

10.1103/PhysRevB.78.012102

10.1088/1742-6596/167/1/012052

10.1063/1.3023059

10.1063/1.2999352

10.1063/1.2768002

10.1063/1.2798498

10.1116/1.3430562

10.1063/1.1880436

10.1021/nl302049k

10.1103/PhysRevB.60.14485

10.1063/1.4867975

10.1103/PhysRevB.90.140103

10.7567/JJAP.51.04DD01

Scott J. F. , Ferroelectric Memories, Berlin/Heidelberg/New York, Springer (2000).

10.1063/1.1579559

10.1016/S0026-2714(01)00049-X

Jung D. J. Jeon B. G. Kim H. H. Song Y. J. Koo B. J. Lee S. Y. Park S. O. Park Y. W. Kim K. . in IEEE International Electron Devices Meeting (IEDM), p. 279 (1999).

10.1063/1.4798265

10.1109/IMW.2014.6849367

10.1109/TDMR.2012.2216269

10.1109/VLSIT.2012.6242443

10.1109/TED.2013.2283465

10.1038/nature05148

Brain R. Baran A. Bisnik N. Chen H.-P. Choi S.-J. Chugh A. Fradkin M. Glassman T. Hamzaoglu F. Hoggan E. Jahan R. Jamil M. Jan C.-H. Jopling J. Kan H. Kasim R. Kirby S. Lahiri S. Lee B.-C. Lenski D. Limb J. Lindert N. Musorrafiti M. Neulinger J. Rockford L. Park J. Singh K. Staus C. Steigerwald J. Turkot B. Vandervoorn P. Venkatesan R. Wu S. Yeh J.-Y. Wang Y. Zhang Z. Zhang K. in Symposium on VLSI Technology (VLSIT), p. T16 (2013).

Koo J.-M. Seo B.-S. Kim S. Shin S. Lee J.-H. Baik H. Lee J.-H. Lee J. H. Bae B.-J. Lim J.-E. Yoo D.-C. Park S.-O. Kim H.-S. Han H. Baik S. Choi J.-Y. Park Y. J. Park Y. in IEEE International Electron Devices Meeting (IEDM), p. 343 (2005).

10.1109/LED.2013.2290117

10.1111/j.1151-2916.1996.tb08108.x

10.1002/aenm.201400610

10.1021/nl1037215

10.1021/nl071804g

10.1109/LED.2013.2291560

10.1038/nmat3649