Fabrication and optical characterization of thin two-dimensional Si3N4 waveguides

Materials Science in Semiconductor Processing - Tập 7 - Trang 453-458 - 2004
N. Daldosso1, M. Melchiorri1, F. Riboli1, F. Sbrana1, L. Pavesi1, G. Pucker2, C. Kompocholis2, M. Crivellari2, P. Bellutti2, A. Lui2
1Department of Physics, Università di Trento, via Sommarive 14, I-38050 Povo, Trento, Italy
2Istituto Trentino di Cultura, Centro per la Ricerca Scientifica e Tecnologica, Microsystem Division, via Sommarive 18, I-38050 Povo, Trento, Italy

Tài liệu tham khảo

Risch, 2002, Mater Sci Eng C, 19, 363, 10.1016/S0928-4931(01)00419-2 Miller, 2000, Proc IEEE, 88, 728, 10.1109/5.867687 Haveman R. Proceedings of workshop processing for ULSI: transistors to interconnects, Austin, TX, 22 April, 1999. Hibino, 2000, IEICE Trans Commun E, 83-B, 2178 Pavesi, 2003, J Phys Condens Matter Topical R, 15, R1169, 10.1088/0953-8984/15/26/201 Wong, 2002, Microelectronics Rel, 42, 317, 10.1016/S0026-2714(02)00008-2 Moore SK. Spectrum IEEE, 31 July 2002. Jang, 2003, Appl Phys Lett, 83, 4116, 10.1063/1.1627480 Stutius, 1977, Appl Opt, 16, 3218, 10.1364/AO.16.003218 Siriam, 1983, Appl Opt, 22, 3664, 10.1364/AO.22.003664 Henry, 1987, Appl Opt, 26, 2621, 10.1364/AO.26.002621 May, 1990, IEEE J Lightwave Technol, 8, 235, 10.1109/50.47876 De Brabander, 1991, IEEE J Quantum Electron, 27, 575, 10.1109/3.81365 Ohtani, 1992, Appl Opt, 31, 5830, 10.1364/AO.31.005830 Inukai, 1994, Japan J Appl Phys, 33, 2593, 10.1143/JJAP.33.2593 Bulla DAP, Borges BV, Romero MA, Morimoto NI, Neto LG, Cortes AL. SBMO/IEEE MTT-S IMOC’99 proceedings, 1999, p. 454. de Ridder, 1998, Special issue on silicon-based optoelectronics, IEEE J Selec Top Quantum Electron, 4, 930, 10.1109/2944.736079 Netti, 2000, Appl Phys Lett, 76, 991, 10.1063/1.125916