Fabrication and characterization of organic semiconductor based photodetector for optical communication

Springer Science and Business Media LLC - Tập 5 - Trang 149-160 - 2017
Debarati Nath1, Puja Dey2, Debajit Deb3, Jayanta Kumar Rakshit4, Jitendra Nath Roy2,3
1Department of Electronics and Communication Engineering, NIT Agartala, Agartala, India
2Department of Physics, Kazi Nazrul University, Asansol, India
3Department of Physics, NIT Agartala, Agartala, India
4Department of Electronics and Instrumentation Engineering, NIT Agartala, Agartala, India

Tóm tắt

Organic semiconductor based photodetectors would be very attractive, innovative and well suited for light detection applications. The requirement of organic semiconductor in photonic device is to low cost, light weight, mechanical flexibility, chemical modification, tunability of absorption range with co-evaporation and co-mixing of molecules and easy to integrate. In fact, organic optoelectronics devices are more eco-friendly and energy efficient. In this research work, main objective is to fabricate and characterize organic semiconductor based photo detector with a proper choice of organic semiconductor as donor and acceptor and optimize by employing diversified organic semiconductors for fast response time, high photosensitivity, high quantum efficiency, low dark current, large dynamic range and long life time. The equivalent circuit model of the proposed organic photo detector (OPD) structure has been designed and simulated using MATLAB Simulink in which Rubrene and BPPC are used as active layer of OPD. 500 MHz of Operating frequency is to be found in this proposed OPD that is much higher than the speed of the red light illumined Bi-layer OPDs reported till today.

Tài liệu tham khảo

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