Fabrication and Characterization of Three-Dimensional InGaAs/GaAs Nanosprings

Motojima S., 1990, Appl. Phys. Lett., 56, 323

Zhang X. B., 1994, Europhys. Lett., 27, 146, 10.1209/0295-5075/27/2/011

Gao P. M., 2005, Science, 309, 1704, 10.1126/science.1113479

Kong X. Y., 2003, Nano Lett., 3, 1631

Chen X. Q., 2003, Nano Lett., 3, 1304

Kaneto K., 1999, Synth. Met., 103, 2579

Prinz V. Y., 2000, Physica E, 6, 831, 10.1016/S1386-9477(99)00249-0

Prinz A. V., 2003, Microelectron. Eng., 67, 788

Schmidt O. G., 2002, Mater. Sci. Eng., C, 19, 396, 10.1016/S0928-4931(01)00428-3

Prinz V. Y., 2002, Nanotechnology, 13, 233, 10.1088/0957-4484/13/2/319

Vorobèv A. B., 2002, Semicond. Sci. Technol., 17, 616, 10.1088/0268-1242/17/6/319

Bell D. J., 2006, press

Hsu Y. W., 1999, J. Appl. Phys., 85, 340

Hjort K., 1994, J. Micromech. Microeng., 4, 13, 10.1088/0960-1317/4/1/001

Lin G., 2000, J. Microelectromech. Syst., 9, 17

Pruitt B. L., 2004, J. Microelectromech. Syst., 13, 229, 10.1109/JMEMS.2003.820266

Kim Y. S., 2005, Sens. Mater., 17, 63

Poggi M. A., 2004, Nano Lett., 4, 1016

Fukuda T., 2003, Proc. IEEE, 91, 1818

Sasaki A., 1996, J. Cryst. Growth, 160, 35, 10.1016/0022-0248(95)00472-6

Tanner B. K., 2000, Appl. Phys. Lett., 77, 2158, 10.1063/1.1315342

Torkhov N. A., 2003, Semiconductors, 37, 1184, 10.1134/1.1619513

Sader J. E., 1999, Rev. Sci. Instrum., 70, 3969, 10.1063/1.1150021

Clifford C. A., 2005, Nanotechnology, 16, 1680, 10.1088/0957-4484/16/9/044

Nakajima K., 1999, Jpn. J. Appl. Phys., Part 1, 38, 1883

Cui Y., 2001, Science, 293, 1292, 10.1126/science.1060018