Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer

IEEE Journal of Quantum Electronics - Tập 38 Số 8 - Trang 1075-1080 - 2002
Y. Miyazaki1, H. Tada1, T. Aoyagi1, T. Nishimura1, Y. Mitsui1
1High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation Limited, Hyogo, Japan

Tóm tắt

We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).

Từ khóa

#Distributed feedback devices #Diode lasers #Quantum well lasers #Absorption #Life estimation #Lifetime estimation #Chirp #Ultraviolet sources #Optical feedback #Optical modulation

Tài liệu tham khảo

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