Extremely small-chirp electroabsorption-modulator integrated distributed feedback laser diode with a shallow quantum-well absorption layer
Tóm tắt
We have developed an extremely small-chirp electroabsorption modulator integrated with a distributed feedback laser diode (EAM-DFB-LD) with a novel shallow quantum-well (QW) absorption layer. By using a shallow QW absorption layer, the estimated lifetime of the photogenerated holes and thus the estimated concentration of the holes generated by optical absorption has been reduced to 9% of that for a conventional QW. It was experimentally confirmed that the excess chirp due to the pileup of carriers has been reduced to 10% of that for a conventional QW, and this result is consistent with the estimates. The shallow QW EAM-DFB-LD has shown a chirp parameter |/spl alpha/| less than 0.7 over the entire range of the EAM reverse bias voltage of 0-3 V. Finally, successful 10-Gb/s return to zero transmission has been confirmed through both positive dispersion (+425 ps/nm) and negative dispersion (-425 ps/nm).
Từ khóa
#Distributed feedback devices #Diode lasers #Quantum well lasers #Absorption #Life estimation #Lifetime estimation #Chirp #Ultraviolet sources #Optical feedback #Optical modulationTài liệu tham khảo
10.1109/50.3969
10.1049/el:19950674
10.1109/3.97272
10.1109/3.853539
morito, 1995, mqw modulator integrated dfb lasers for multigigabit transmission systems, Proc 21st ECOC, 887
10.1109/68.205619
10.1063/1.364070
10.1109/50.257953
10.1109/50.56402
10.1103/PhysRevB.38.6160
10.1049/el:19930803