Extensions of the Chalmers nonlinear HEMT and MESFET model

chan, 1995, device linearity imptovement by al<formula><tex>$_{0.3}$</tex></formula>ga<formula><tex>$_{0.7}$</tex></formula>as/in<formula><tex>$_{0.2}$</tex></formula>ga<formula><tex>$_{0.8}$</tex></formula>as heterostructure doped-chanel fet's, IEEE Electron Devices Lett, 16, 33, 10.1109/55.363208

10.1109/MWSYM.1994.335274

bengtsson, 1994, an extraction program for nonlinear transistor model parameters for hemt's and mesfet's, Microwave J, 38, 146

0, Microwave Harmonica

10.1109/EUMA.1991.336464

10.1109/TMTT.1979.1129744

pirola, 1994, a large-signal model for medium power pseudomorphic hemt's for k-ka band applications, IEEE MTT-S European Topical Congress Technologies Wireless Applications, 43

10.1002/mmce.4570050306

anholt, 1995, Electrical and Thermal Characterization of MESFET s HEMT s and HBTs

10.1049/el:19900445

10.1109/16.2449

10.1109/22.179888

teyssier, 1993, a pulsed <formula><tex>$s$</tex></formula>-parameter measurement set-up for the nonlinear characterization of fet's and bipolar transistors, Proc 23rd EUMC, 489

10.1109/22.17389

10.1049/el:19850373

10.1109/22.32235

10.1109/TMTT.1985.1132960

10.1109/16.155874

10.1109/TMTT.1980.1130099

10.1109/16.2539

10.1109/22.44128

fukui, 1980, thermal resistance of gaas fet, Proc IEDM 80, 118

10.1002/mmce.4570010204

gerber, 1994, a self-heating hbt model for harmonic-balans simulators with parameter extraction, Asia-Pacific Microwave Conf, 1029

10.1109/75.282573