Estimation of switching losses considering non-linear parasitic capacitances of GaN E-HEMT

Chen, J., Luo, Q., Huang, J., He, Q., Du, X.: A complete switching analytical model of low-voltage eGaN HEMTs and Its application in loss analysis. IEEE Trans. Ind. Electron. 67(2), 1615–1625 (2020)

Wang, K., Yang, X., Li, H., Ma, H., Zeng, X., Chen, W.: An analytical switching process model of low-voltage eGaN HEMTs for loss calculation. IEEE Trans. Power Electron. 31(1), 635–647 (2015)

GaN Systems GS66516B datasheet, [online] Available: https://gansystems.com/

Nexperia GAN041–650WSBQ datasheet, [online] Available: https://www.nexperia.com/

Infineon, IGOT60R070D1 datasheet, [online] Available: https://www.infineon.com/

Brown, J.: Modeling the switching performance of a MOSFET in the high side of a non-isolated buck converter. IEEE Trans. Power Electron. 21(1), 3–10 (2006)

Guo, J., Ge, H., Ye, J., & Emadi, A. (2015) Improved method for MOSFET voltage rise-time and fall-time estimation in inverter switching loss calculation. 2015 IEEE Transportation Electrification Conference and Expo (ITEC) 1–6

Luo, Y., Afrasiabi, S. N., Lai, C., & Pillay, P. (2020) An Improved Method to Estimate Turn-on Switching Loss of 650V GaN HEMTs in Hard-switching Topology. 2020 23rd International Conference on Electrical Machines and Systems (ICEMS), 1078–1083

Wang, K., Tian, M., Li, H., Zhang, F., Yang, X., & Wang, L. (2016) An improved switching loss model for a 650V enhancement-mode GaN transistor. 2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC), 1–6

Toshiba Application Note, "Power MOSFET Electrical Characteristic," https://toshiba-semicon-storage.com/info/docget.jsp?did=13415

de Paula, W.J., Tavares, G.H.M., Soares, G.M., Almeida, P.S., Braga, H.A.C.: Switching losses prediction methods oriented to power MOSFETs–a review. IET Power Electron. 13(14), 2960–2970 (2020)

Prado, E.O., Bolsi, P.C., Sartori, H.C., Pinheiro, J.R.: Simple analytical model for accurate switching loss calculation in power MOSFETs using non-linearities of Miller capacitance. IET Power Electron. 15(7), 594–604 (2022)

Infineon Application Note AN2, "PFC boost converter design guide," https://community.infineon.com/gfawx74859/attachments/gfawx74859/powermanagement/751/1/Infineon-ApplicationNote_PFCCCMBoostConverterDesignGuide-AN-v02_00-EN.pdf

Xiong, Y., Sun, S., Jia, H., Shea, P., Shen, Z.J.: New physical insights on power MOSFET switching losses. IEEE Trans. Power Electron. 24(2), 525–531 (2009)

Qi, Z., Pei, Y., Wang, L., Wang, K., Zhu, M., Zhao, C., Gan, Y.: An accurate datasheet-based full-characteristics analytical model of GaN HEMTs for deadtime optimization. IEEE Trans. Power Electron. 36(7), 7942–7955 (2020)