Essential physics of carrier transport in nanoscale MOSFETs

rhew, 2001, private communication

10.1109/SISPAD.2000.871193

natori, 2001, scaling limit of the mos transistor—a ballistic mosfet, IEICE Trans Electron, e84 c, 1029

10.1016/0038-1101(93)90149-K

datta, 1997, Electronic Transport in Mesoscopic Systems

10.1103/PhysRev.123.51

10.1103/PhysRev.125.1570

solomon, 1982, a comparison of semiconductor devices for high-speed logic, Proceedings of the IEEE, 70, 489, 10.1109/PROC.1982.12333

johnson, 1973, the insulated-gate field-effect transistor—a bipolar transistor in disguise, RCA Rev, 34, 80

10.1016/0038-1101(85)90031-0

10.1109/SISPAD.2000.871197

10.1109/16.987120

10.1006/spmi.2000.0920

0

10.1016/S0080-8784(08)60267-7

javanovic, 2000, 7th Int Worklshop Computational Electronics

bude, 1999, private communication

jungemann, 1999, efficient full-band monte carlo simulation of silicon devices, IEICE Trans Electronics, e82, 870

10.1006/spmi.1997.0563

10.1109/T-ED.1987.22935

10.1109/55.596937

ren, 2000, the ballistic nanotransistor: a simulation study, IEDM Tech Dig, 715

10.1109/55.841309

10.1109/55.225584

taur, 1998, Fundamentals of VLSI Devices

10.1109/55.6947

10.1109/IEDM.1999.824213

10.1063/1.357263

10.1109/IEDM.1999.823845

10.1109/16.817590

rhew, 2001, Numerical Study of a Ballistic MOSFET

10.1109/16.372070

10.1017/CBO9780511618611