Erratum to: The effect of Bi composition on the electrical properties of InP1−xBi x

Science China Physics, Mechanics & Astronomy - 2018
GuanNan Wei1, Xing Dai2, Qi Feng1, WenGang Luo1, YiYang Li2, Kai Wang3, LiYao Zhang3, WenWu Pan3, ShuMin Wang3, ShenYuan Yang1, KaiYou Wang1
1State Key Laboratory of Superlattices and Microstructures, Institute of semiconductors, Chinese Academy of Sciences, Beijing, China
2State Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
3State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of MicroSystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

Tóm tắt

In the original publication [1] of this paper, the last supported grant number “11474247” should be “11474274”.

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Tài liệu tham khảo

G. N. Wei, X. Dai, Q. Feng, W. G. Luo, Y. Y. Li, K. Wang, L. Y. Zhang, W. W. Pan, S. M. Wang, S. Y. Yang, and K. Y. Wang, Sci. China-Phys. Mech. Astron. 60, 047022 (2017).
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Science China Physics, Mechanics & Astronomy

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