Equivalent base resistance of point-contact transistors
Tóm tắt
A theoretical expression for the equivalent base resistanceR
b of point-contact transistors is derived by consideration of a three-dimensional electric field problem. The analysis shows that the equivalent base resistance depends on the location of the emitter, resistivity of the semiconductor and the dimensions of the configuration.
Tài liệu tham khảo
Valdes, L. B., Proc. Instn Radio Engrs40 (1952) 1429.