Equilibrium Dependence of the Conductivity of Pure and Tin‐Doped Indium Oxide on Oxygen Partial Pressure and Formation of an Intrinsic Defect Cluster

Journal of the American Ceramic Society - Tập 91 Số 1 - Trang 240-245 - 2008
Yutaka Ohya1,2, Tomonori Yamamoto2, Takayuki Ban1,2
1*Member, American Ceramics Society.
2Department of Materials Science and Technology, Gifu University, Gifu 501-1193, Japan

Tóm tắt

The dependence of the electrical conductivity of pure (99.999%) and tin‐doped indium oxide (In2O3) ceramics on oxygen partial pressure was investigated at 800° and 850°C. The doping amount of tin was 100–1000 ppm, which is within the solubility limit at the temperatures measured. The conductivity of doped ceramics was independent of , and the carrier concentration was almost the same as the estimated value from the tin content. The conductivity of the pure In2O3 ceramic was proportional to. By considering a singly charged defect cluster of interstitial indium and interstitial oxygen, , the conductivity dependence is deduced to be proportional to. There are large and three adjacent vacant sites, 8a and 16c, in the In2O3 structure to enter indium and oxygen.

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Thông tin xuất bản

Journal of the American Ceramic Society

Tập 91 Số 1

240-245

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