Enhancement of photoluminescence from Tm-doped (Al Ga1−)2O3 films by pulsed laser deposition

Ceramics International - Tập 49 - Trang 28702-28710 - 2023
Zewei Chen1, Makoto Arita2, Gaofeng Deng1, Katsuhiko Saito1, Tooru Tanaka1, Qixin Guo1
1Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan
2Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Fukuoka, 819-0395, Japan

Tài liệu tham khảo

Gupta, 2021, Rare earth (RE) doped phosphors and their emerging applications: a review, Ceram. Int., 47, 19282, 10.1016/j.ceramint.2021.03.308 Toncelli, 2021, RE-based inorganic-crystal nanofibers produced by electrospinning for photonic applications, Materials, 14, 2679, 10.3390/ma14102679 Patnam, 2023, Rare-earth-free Mn4+ ions activated Ba2YSbO6 phosphors for solid-state lighting, flexible display, and anti-counterfeiting applications, Ceram. Int., 49, 2967, 10.1016/j.ceramint.2022.09.281 Swathi, 2023, Balanehru Subramanian, B. Daruka Prasad, and H. Nagabhushana; Designing vivid green Sr9Al6O18:Er3+ phosphor for information encryption and nUV excitable cool-white LED applications, J. Lumin., 257, 119618, 10.1016/j.jlumin.2022.119618 Lee, 2003, Enhanced blue emission from Tm-doped AlxGa1−xN electroluminescent thin films, Appl. Phys. Lett., 83, 2094, 10.1063/1.1611275 Kabongo, 2017, Structural, photoluminescence, and XPS properties of Tm3+ ions in ZnO nanostructures, J. Lumin., 187, 141, 10.1016/j.jlumin.2017.02.024 Kim, 2003, Electroluminescence from Tm-doped GaN deposited by radio-frequency planar magnetron sputtering, Appl. Phys. Lett., 83, 4746, 10.1063/1.1627471 Ichikawa, 2020, Room-temperature operation of near-infrared light-emitting diode based on Tm-doped GaN with ultra-stable emission wavelength, J. Appl. Phys., 127, 113103, 10.1063/1.5140715 Favennec, 1989, Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials, Electron. Lett., 25, 718, 10.1049/el:19890486 Chen, 2016, Observation of low voltage driven green emission from erbium doped Ga2O3 light emitting devices, Appl. Phys. Lett., 109 Yang, 2021, Highly efficient and stable electroluminescence from Er-doped Ga2O3 nanofilms fabricated by atomic layer deposition on silicon, Appl. Phys. Lett., 118, 141104, 10.1063/5.0049556 Guo, 2017, Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition, Thin Solid Films, 639, 123, 10.1016/j.tsf.2017.08.038 Chen, 2022, Near-infrared light-emitting diodes based on Tm-doped Ga2O3, J. Lumin., 245, 10.1016/j.jlumin.2022.118773 Chen, 2021, Low threshold voltage blue light emitting diodes based on thulium doped gallium oxides, APEX, 14 Zhang, 2014, Wide bandgap engineering of (AlGa)2O3 films, Appl. Phys. Lett., 105 Waeselmann, 2016, Lasing of Nd3+ in sapphire, Laser Photon. Rev., 10, 510, 10.1002/lpor.201500319 Milisavljevic, 2022, Tb-doped β-(AlxGa1-x)2O3 epitaxial films on c-sapphire substrates fabricated via a spin-coating method, J. Alloys Compd., 928, 10.1016/j.jallcom.2022.167208 Zhang, 2018, Evolution of optical properties and band structure from amorphous to crystalline Ga2O3 films, AIP Adv., 8 Kokubun, 2007, Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors, Appl. Phys. Lett., 90, 10.1063/1.2432946 Wakabayashi, 2018, Band alignment at β-(AlxGa1−x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition, Appl. Phys. Lett., 112, 10.1063/1.5027005 Liao, 2021, Wide range tunable bandgap and composition β-phase (AlGa)2O3 thin film by thermal annealing, Appl. Phys. Lett., 118, 10.1063/5.0027067 Wang, 2015, Energy band bowing parameter in MgZnO alloys, Appl. Phys. Lett., 107 Cooke, 2022, Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films, Sci. Rep., 12, 3243, 10.1038/s41598-022-07242-z Onuma, 2013, Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals, Appl. Phys. Lett., 103, 10.1063/1.4816759 Harwig, 1978, Some observations on the photoluminescence of doped β-galliumsesquioxide, J. Solid State Chem., 24, 255, 10.1016/0022-4596(78)90017-8 Girija, 2013, Synthesis, morphology, optical and photocatalytic performance of nanostructured β-Ga2O3, Mater. Res. Bull., 48, 2296, 10.1016/j.materresbull.2013.02.047 Deng, 2021, Improvement of sensing sensitivity based on green emissions from Er-doped (AlGa)2O3 films, J. Lumin., 232, 10.1016/j.jlumin.2020.117879 Peelaers, 2018, Structural and electronic properties of Ga2O3-Al2O3 alloys, Appl. Phys. Lett., 112, 10.1063/1.5036991 Hömmerich, 2003, Photoluminescence properties of in situ Tm-doped AlxGa1−xN, Appl. Phys. Lett., 83, 4556, 10.1063/1.1631742 Takahei, 1989, Intra‐4f‐shell luminescence excitation and quenching mechanism of Yb in InP, J. Appl. Phys., 66, 4941, 10.1063/1.343765 Nepal, 2009, Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys, Appl. Phys. Lett., 94, 111103, 10.1063/1.3097808