Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

Nanomaterials - Tập 11 Số 12 - Trang 3311
Yadong Zhang1, Xiaoting Sun2, Kunpeng Jia1, Huaxiang Yin1,3, Qingzhu Zhang1, Jiahan Yu1, Zhenhua Wu1,3
1Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
2School of Information Engineering, Hebei University of Technology, Tianjin, 300401, China
3University of Chinese Academy of Sciences, Beijing, 100049, China

Tóm tắt

The degradation of InSe film and its impact on field effect transistors are investigated. After the exposure to atmospheric environment, 2D InSe flakes produce irreversible degradation that cannot be stopped by the passivation layer of h-BN, causing a rapid decrease for InSe FETs performance, which is attributed to the large number of traps formed by the oxidation of 2D InSe and adsorption to impurities. The residual photoresist in lithography can cause unwanted doping to the material and reduce the performance of the device. To avoid contamination, a high-performance InSe FET is achieved by a using hard shadow mask instead of the lithography process. The high-quality channel surface is manifested by the hysteresis of the transfer characteristic curve. The hysteresis of InSe FET is less than 0.1 V at Vd of 0.2, 0.5, and 1 V. And a high on/off ratio of 1.25 × 108 is achieved, as well relative high Ion of 1.98 × 10−4 A and low SS of 70.4 mV/dec at Vd = 1 V are obtained, demonstrating the potential for InSe high-performance logic device.

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Nanomaterials

Tập 11 Số 12

3311

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