Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

Superlattices and Microstructures - Tập 51 - Trang 538-543 - 2012
Jun Li1,2, Fan Zhou1, Hua-Ping Lin1, Wen-Qing Zhu1,2, Jian-Hua Zhang2, Xue-Yin Jiang1, Zhi-Lin Zhang1,2
1Department of Materials Science, Shanghai University, Jiading, Shanghai 201800, People’s Republic of China
2Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, People’s Republic of China

Tài liệu tham khảo

Kim, 2007, Appl. Phys. Lett., 90, 212114, 10.1063/1.2742790 Sato, 2009, Appl. Phys. Lett., 94, 133502, 10.1063/1.3112566 Nomura, 2009, Appl. Phys. Lett., 95, 013502, 10.1063/1.3159831 GadelRab, 1998, IEEE Trans. Electron. Dev., 45, 465, 10.1109/16.658682 Papadopoulos, 2010, J. Display Technol., 6, 150, 10.1109/JDT.2009.2039986 Zan, 2010, Appl. Phys. Lett., 97, 203506, 10.1063/1.3517506 Görrn, 2007, Appl. Phys. Lett., 91, 193504, 10.1063/1.2806934 Yuang, 2009, J. Phys. D, 42, 215301, 10.1088/0022-3727/42/21/215301 Nomura, 2008, Appl. Phys. Lett., 92, 202117, 10.1063/1.2927306 Kamiya, 2010, Sci. Technol. Adv. Mater., 11, 044305, 10.1088/1468-6996/11/4/044305