Enhanced photoelectrochemical performance of black Si electrode by forming a pn junction

Journal of Materials Science: Materials in Electronics - Tập 29 - Trang 20734-20741 - 2018
Chenchen Jia1, Xiuquan Gu1, Yulong Zhao1, Linmeng Wang1, Yinghuai Qiang1
1School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou, China

Tóm tắt

A pn junction based on the black Si wafer has been prepared for the photoelectrochemical (PEC) applications by a facile chemical etching method combined with thermal diffusion process. And also in this work, a black Si wafer were fabricated by using a commercial multicrystaline Si (mc-Si) wafer as the raw. It was demonstrated that pn junction was beneficial to enhance the PEC performance of a Si photoanode. The mechanism was further clarified by an electrochemical impedance analysis. The improved PEC activity was attributed to a more efficient charge separation inside the solid electrode. Besides, the p-type Si wafer displayed a characteristic of n-type semiconductor, which was explained through a simple energy band model.

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Thông tin xuất bản

Journal of Materials Science: Materials in Electronics

Tập 29

20734-20741

Thông tin tác giả