Enhanced etching characteristics of Si{100} in NaOH-based two-component solution

Tilli M, Motooka T, Airaksinen VM, Franssila S, Krockel MP, Lindroos V (2015) Handbook of silicon based MEMS materials and technologies. William Andrew Publishing, United States Pal P, Sato K (2017) Silicon wet bulk micromachining for MEMS. Pan Stanford Publishing, Singapore, p 412 Gad-el-Hak M (2002) The MEMS handbook. CRC Press LLC, Boca Raton Kovacs GTA, Maluf NI, Petersen KE (1998) Bulk micromachining of silicon. IEEE Proc 86:1536–1551 Pal P, Sato K (2009) Complex three dimensional structures in Si{100} using wet bulk micromachining. J Micromech Microeng 19:105008 Zubel I (2019) Anisotropic etching of Si. J Micromech Microeng 29(9):93002 Pal P, Sato K (2009) Various shapes of silicon freestanding microfluidic channels and microstructures in one step lithography. J Micromech Microeng 19(5):055003 Ashok A, Aparna G, Pal P, Pandey AK (2018) An analysis of stepped trapezoidal shaped microcantilever beams for MEMS based Devices. J Micromech Microeng 28(6):085003 Seidel H, Csepregi L, Heuberger A, Baumgartel H (1990) Anisotropic etching of crystalline silicon in alkaline solutions I: Orientation dependence and behavior of passivation layers. J Electrochem Soc 137(11):3612–3626 Sato K, Shikida M, Matsushima Y, Yamashiro T, Asaumi K, Iriye Y, Yamamoto M (1998) Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration. Sens Actuators A 61:87–93 Tanaka H, Yamashita S, Abe Y, Shikida M, Sato K (2004) Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution. Sens Actuators A 114:516–520 Baryeka I, Zubel I (1995) Silicon anisotropic etching in KOH-isopropanol etchant. Sens Actuators A 48:229–238 Pal P, Ashok A, Haldar S, Xing Y, Sato K (2015) Anisotropic etching in low concentration KOH: effects of surfactant concentration. Micro Nano Lett 10(4):224–228 Gosalvez MA, Pal P, Ferrando N, Hida H, Sato K (2001) Experimental procurement of the complete 3D etch rate distribution of Si in anisotropic etchants based on vertically micromachined wagon wheel samples. J Micromech Microeng 21(12):125007 Tabata O, Asahi R, Funabashi H, Shimaoka K, Sugiyama S (1992) Anisotropic etching of silicon in TMAH solutions. Sens Actuators A 34(1):51–57 Sato K, Shikida M, Yamashiro T, Asaumi K, Iriye Y, Yamamoto M (1999) Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation. Sens Actuators A 73:131–137 Pal P, Sato K, Gosalvez MA, Tang B, Hida H, Shikida M (2011) Fabrication of novel microstructures based on orientation dependent adsorption of surfactant molecules in TMAH solution. J Micromech Microeng. 21(1):015008 Chen PH, Peng HY, Hsieh CM, Chyu MK (2001) The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO2 layer. Sens Actuators A 93(2):132–137 Pal P, Sato K (2010) Fabrication methods based on wet etching process for the realization of silicon MEMS structures with new shapes. Microsyst Technol 16(7):1165–1174 Tellier CR, Charbonnieras AR (2003) Characterization of the anisotropic chemical attack of (hhl) silicon plates in a TMAH 25 wt% solution: micromachining and adequacy of the dissolution slowness surface. Sens Actuators A 105:62 Zhang J, Hon WC, Leung LLW, Chen KJ (2005) CMOS-compatible micromachining techniques for fabricating high-performance edge-suspended RF/microwave passive components on silicon substrates. J Micromech Microeng 15:328–335 Pal P, Gosalvez MA, Sato K (2012) Etched profile control in anisotropic etching of silicon by TMAH+Triton. J Micromech Microeng 22(6):065013 Wu MP, Wu QH, Ko WH (1986) A study on deep etching of silicon using ethylenediamine-pyrocatechol-water. Sens Actuators A 9:333–343 Dutta S, Imran Md, Kumar P, Pal R, Datta P, Chatterjee R (2011) Comparison of etch characteristics of KOH, TMAH and EDP for bulk micromachining of silicon (110). Microsyst Technol 17:1621–1628 Schnakenberg U, Benecke W, Lochel B, Ullerich S, Lange P (1991) NH4OH-based etchants for silicon micromachining: Influence of additives and stability of passivation layers. Sens Actuators A 25–27:1–7 Clarck LD, Lund JL, Edell DJ (1988) Cesium hydroxide (CsOH): A useful etchant for micromachining silicon. In: Tech. Digest, IEEE Solid State Sensor and Actuator Workshop (Hilton Head Island, SC, 1988) pp 5–8 Declercq MJ, Gerzberg L, Meindl JD (1975) Optimization of the hydrazine-water solution for anisotropic etching of silicon in integrated circuit technology. J Electrochem Soc: Solid State Science 122:545–552 Gajda MA, Ahmed H, Shaw JEA, Putnis A (1994) Anisotropic etching of silicon in hydrazine. Sens Actuators A 40:227–236 Allongue P, Costa-Kieling V, Gerischer H (1993) Etching of Silicon in NaOH Solutions: II electrochemical studies of n-Si (111) and (100) and mechanism of the dissolution. J Electrochem Soc 140(4):1018–1026 Akhter P, Baig A, Mufti A (1989) Dissolution of Si (100) layers in NaOH aqueous solutions. J Physics D: Applied Physics 22(12):1924 Gupta A, Pal P, Sharma CS (2019) Surface texturing of Silicon 100 in an extremely low concentration TMAH for minimized reflectivity. ECS J Solid State Sci Technol 8(10):622–628 Solanki CS (2015) Solar photovoltaics: fundamentals technologies and applications. PHI Learning Pvt Ltd, New Delhi, p 16 Tang B, Pal P, Gosalvez MA, Shikida M, Sato K, Amakawa H, Itoh S (2009) Ellipsometry study of the adsorbed surfactant thickness on Si{110} and Si{100} and the effect of pre-adsorbed surfactant layer on etching characteristics in TMAH. Sens Actuators A 156:334–341 Resnik D, Vrtacnik D, Aljancic U, Amon S (2003) Effective roughness reduction of 100 and 311 planes in anisotropic etching of 100 silicon in 5% TMAH. J Micromech Microeng 13:26–34 Merlos A, Acero M, Bao MH, Bausells J, Esteve J (1993) TMAH/IPA anisotropic etching characteristics. Sens Actuators A 37:737–743 Sundaram KB, Vijayakumar A, Subramanian G (2005) Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications. Microelectronic Eng 77:230–241 Yang CR, Chen PY, Chiou YC, Lee RT (2005) Effects of mechanical agitation and surfactant additive on silicon anisotropic etching in alkaline KOH solution. Sens Actuators A 119:263–270 Xu YW, Michael A, Kwok CY (2011) Formation of ultra-smooth 45° micromirror on (100) silicon with low concentration TMAH and surfactant: techniques for enlarging the truly 45° portion. Sens Actuators A 166:164–171 Pal P, Sato K, Gosalvez MA, Kimura Y, Ishibashi K, Niwano M, Hida H, Tang B, Itoh S (2009) Surfactant adsorption on single crystal silicon surfaces in TMAH solution: orientation-dependent adsorption detected by in situ infra-red spectroscopy. J Microelectromech Syst 18:1345–1356 Pal P, Sato K, Gosalvez MA, Shikida M (2007) Study of rounded concave and sharp edge convex corners undercutting in CMOS compatible anisotropic etchants. J Micromech Microeng 17:2299–2307 Chen J, Liu L, Li Z, Tan Z, Jiang Q, Fang H, Xu Y, Liu Y (2002) Study of anisotropic etching of (100) Si with ultrasonic agitation. Sens Actuators A 96(2):152–156 Dziuban JA (2000) Microwave enhanced fast anisotropic etching of monocrystalline silicon. Sens Actuators A 185(1):133–138 Dziuban JA, Walczak R (2001) Etching microwave silicon [EMSi]-microwave enhanced fast deep anisotropic etching of silicon for micro-electromechanical systems [MEMS]. Sens materials 13(1):41–55 Moldovan C, Iosub R, Dascalu D, Nechifor G (1999) Anisotropic etching of silicon in a complexant redox alkaline system. Sens Actuators B 58(1):438–449 Van den Meerakker JEAM, Van der Straaten MHM (1990) A mechanistic study of silicon etching in NH3/H2O2 cleaning solutions. J Electrochem Soc 137(4):1239–1243 Sotoaka R (2008) New etchants for high speed anisotropic etching of silicon. J Surf Finish Soc Japan 59(2):104 Yang CR, Chen PY, Yang CH, Chiou YC, Lee RT (2005) Effects of various ion-typed surfactants on silicon anisotropic etching properties in KOH and TMAH solutions. Sens Actuators A 119(1):271–281 Menon PK, Rao AVN, Murthy AL, Pandey AK, Pal P (2020) Study of high speed etching of silicon in KOH + NH2OH Solution at lower temperatures for the fabrication of through holes in silicon wafer. Micro Nano Lett 15(6):365–369 Swarnalatha V, Rao AVN, Ashok A, Singh SS, Pal P (2017) Modified TMAH based etchant for improved etching characteristics on Si{100} wafer. J Micromech Microeng. 27(8):085003 Swarnalatha V, Rao AVN, Pal P (2018) Effective improvement in the etching characteristics of Si{110} in low concentration TMAH solution. Micro Nano Lett 13(8):1085–1089 Swarnalatha V, Pal P, Pandey AK, Rao AVN, Xing Y, Tanaka H, Sato K (2020) Systematic study of the etching characteristics of Si{111} in modified TMAH. Micro Nano Lett 15(1):52–57 Rao AVN, Swarnalatha V, Ashok A, Singh SS, Pal P (2017) Effect of NH2OH on etching characteristics of Si{100} in KOH solution. ECS J Solid State Sci Technol 6(9):609–614 Rao AVN, Swarnalatha V, Pal P (2017) Etching characteristics of Si{110} in 20 wt% KOH with addition of hydroxylamine for the fabrication of bulk micromachined MEMS. Micro Nano Syst Lett 5(23):1–9 Rao AVN, Pal P, Swarnalatha V, Pandey AK, Menon PK, Tanaka H, Sato K (2019) Aging effects of KOH+NH2OH solution on the etching characteristics of silicon. ECS J Solid State Sci Technol 8(11):685–692 Pal P, Swarnalatha V, Rao AVN, Pandey AK, Tanaka H, Sato K (2021) High speed silicon wet anisotropic etching for applications in bulk micromachining: a review. Micro Nano Syst Lett 9(4):1–59 Tang B, Sato K, Zhang D, Cheng Y (2014) Fast Si(100) etching with a smooth surface near the boiling temperature in surfactant-modified tetramethylammonium hydroxide solutions. Micro Nano Lett 9(9):582–584 Vazsonyi E, Adam M, Ducso C, Vizvary Z, Toth AL, Barsony I (2005) Three-dimensional force sensor by novel alkaline etching technique. Sens Actuators A 123–124:620–626 Vazsonyi E, Vertesy Z, Toth AL (2003) Anisotropic etching of silicon in a two-component alkaline solution. J Micromech Microeng 13:165–169 Gangopadhyay U, Dhungel SK, Kim K, Manna U, Basu PK, Kim HJ, Karunagaran B, Lee KS, Yoo JS, Yi J (2005) Novel low cost chemical texturing for very large area industrial multi-crystalline silicon solar cells. Semicond Sci Technol 20:938–946 Swarnalatha V, Vismaya KT, Rao AVN, Pal P, Pandey AK, Tanaka H, Sato K (2020) Etching mechanism behind the high speed etching of silicon in NH2OH-added alkaline solutions. IEEJ Trans sSens Micromachines 140(1):24–30 Pal P, Sato K (2015) A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching. Micro and Nano Syst Lett 3(6):1–42 Pal P, Sato K, Chandra S (2007) Fabrication techniques of convex corners in a (100)-silicon wafer using bulk micromachining: a review. J Micromech Microeng 17:R1–R23 Tang B, Yao MQ, Tan G, Pal P, Sato K, Su W (2014) Smoothness control of wet etched Si{100} surfaces in TMAH + Triton. Key Eng Mater 609:536–541