Enhanced Performance and Stability of Polymer BHJ Photovoltaic Devices from Dry Transfer of PEDOT:PSS

Wiley - Tập 7 Số 7 - Trang 1957-1963 - 2014
Jung Kyu Kim1, Insun Park2, Wanjung Kim1, Dong Hwan Wang3, Dae‐Geun Choi4, Yeong Suk Choi5,2,6, Jong Hyeok Park5,1,6
1SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
2Samsung Advanced Institute of Technology, Samsung Electronics, Yongin 446-712, Republic of Korea
3School of Integrative Engineering, Chung-Ang University, 221, Heukseok-Dong, Dongjak-Gu, Seoul 156-756, Republic of Korea
4Department of Nano Manufacturing Technology, Nano-Mechanical System Research Division, Korea Institute of Machinery & Materials, 104, Jang-dong, Yuseong-gu, Daejeon 305-343 (Republic of Korea)
5Jong Hyeok Park, SKKU Advanced Institute of Nanotechnology (SAINT) and School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746 (Republic of Korea)===
6Yeong Suk Choi, Samsung Advanced Institute of Technology, Samsung Electronics, Yongin, 446-712 (Republic of Korea)===

Tóm tắt

AbstractPolymer solar cells with enhanced initial cell performances and long‐term stability were fabricated by performing a simple dry transfer of a hole extraction layer [poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)] onto an indium tin oxide (ITO) substrate. Due to the very flat surface of the polyurethane acrylate/polycarbonate (PUA/PC) film, which was used as a mold and resembled the surface of the original substrate (silicon wafer), the transferred layer had a very smooth surface morphology, resulting in enhancement of the interfacial characteristics. The work function of the PEDOT:PSS layer and the morphology of bulk hetero junction (BHJ) layer were tuned by controlling the position of PSS enrichment in the PEDOT:PSS layer using the dry transfer. The power conversion efficiency of PTB7:PC71BM BHJ device prepared by the dry transfer was 8.06 %, which was significantly higher than that of the spin‐cast device (7.32 %). By avoiding direct contact between the ITO substrate and the PEDOT:PSS solution in the dry transfer system, etching and diffusion of indium in the ITO substrate were greatly reduced, thereby improving the stability.

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Wiley

Tập 7 Số 7

1957-1963

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