Electroplating in microsystems

Notarp, D. L.: Metallische Konstruktionswerkstoffe in der Mikrosystemtechnik bei strukturierter elektrochemischer Herstellung, Dissertation 2002, Universität Bremen, Diss., 2001 Lee, S. W. R.; Hon, R.; Zhang, S. X. D.; Wong, C. K.: 3D stacked flip chip packaging with through silicon vias and copper plating or conductive adhesive filling. In: Electronic Components and Technology Conference, 2005. Proceedings. 55th IEEE, 2005, pp. 795–801 Johnson, R. W.; Evans, J. L.; Jacobsen, P.; Thompson, J. R.; Christopher, M.: The changing automotive environment: high-temperature electronics. In: Electronics Packaging Manufacturing, IEEE Transactions on 27 (2004), No. 3, pp. 164–176 Heiermann, W.; Geruschke T.; Grella, K.; Bartsch, M.; Borrmann T.; Ruß, M.; Vogt, H.: Reliability of Thermosonic Bonded Palladium Wires in High Temperature Environments up to 350 °C. In: 23rd Micromechanics and Microsystems Europe Workshop. September 9-12, 2012, Ilmenau Mustain, H. A.; Brown, W. D.; Ang, S. S.: Transient liquid phase die attach for high-temperature silicon carbide power devices. In: Components and Packaging Technologies, IEEE Transactions on 33 (2010), No. 3, pp. 563–570 Bernstein, L.: Semiconductor Joining by the Solid-Liquid-Interdiffusion (SLID) Process I. The Systems Ag-In, Au-In, and Cu-In. In: Journal of The Electrochemical Society 113 (1966), No. 12, pp. 1282–1288 Welch, W. C.; Najafi, K.: Gold-indium Transient Liquid Phase (TLP) wafer bonding for MEMS vacuum packaging. In: Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on IEEE, 2008, pp. 806–809 Tollefsen, T. A.; Larsson, A.; Løvvik, O. M.; Aasmundtveit, K.: Au-Sn SLID Bonding Properties and Possibilities. In: Metallurgical and Materials Transactions B (2012), pp. 1–9 Roxhed, N.; Niklaus, F.; Fischer, A.C.; Forsberg, F.; Höglund, L.; Ericsson, P.; Samel, B.; Wissmar, S.; Elfving, A.; Simonsen, T.I. et al.: Low-cost uncooled microbolometers for thermal imaging. In: SPIE Photonics Europe International Society for Optics and Photonics, 2010, pp. 772611–772611 Chen, Y. C.; Lee, S. J.; Lee, C. C.: High temperature Cu-Sn joints manufactured by a 250 °C fluxless bonding process. In: Multi-Chip Module Conference, 1995. MCMC-95, Proceedings., 1995 IEEE IEEE, 1994, pp. 206–211 Liu, H.; Salomonsen, G.; Wang, K.; Aasmundtveit, K. E.; Hoivik, N.: Wafer-Level Cu/Sn to Cu/Sn SLID-Bonded Interconnects with Increased Strength. In: Components, Packaging and Manufacturing Technology, IEEE Transactions on 1 (2011), No. 9, pp. 1350–1358 Grella, K.; Dreiner, S.; Schmidt, A.; Heiermann W.; Kappert, H.; Vogt, H.; Paschen, U.: High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology. In: Proceedings of 2012 International High Temperature Conference (HITEC), May 8-10, 2012, Albuquerque http://www.hot-300.fraunhofer.de/