Electronic properties of Si δ-doped GaAs quantum wells

Schubert, 1990, Surface Science, 228, 240, 10.1016/0039-6028(90)90301-N Wagner, 1990, Review B, 42, 7280, 10.1103/PhysRevB.42.7280 Ke, 1992, Physical Review B, 45, 14114, 10.1103/PhysRevB.45.14114 Shih, 1991, Applied Physics Letters, 59, 1344, 10.1063/1.105303 Shibli, 1992, Applied Physics Letters, 60, 2895, 10.1063/1.106811 Schubert, 1990, Journal of Vaccum Science and Technology A, 8, 2980, 10.1116/1.576617 Scolfaro, 1990, International Journal of Quantum Chemistry, 24, 447, 10.1002/qua.560382444 Koch, 1989, Materials Science and Engineering, B1, 221 Liu, 1992, Applied Physics Letters, 60, 2628, 10.1063/1.106902 Maciel, 1990, Surface Science, 228, 251, 10.1016/0039-6028(90)90303-P Tempel, 1990, Surface Science, 228, 247, 10.1016/0039-6028(90)90302-O Wagner, 1989, Applied Physics Letters, 55, 978, 10.1063/1.101695 Zrenner, 1989, Revue de Physique Appliquee, T24, 31, 10.1051/rphysap:0198900240103100 Schmitt-Rink, 1989, Advances in Physics, 38, 89, 10.1080/00018738900101102