Electron beam lithography at 10 keV using an epoxy based high resolution negative resist

Microelectronic Engineering - Tập 84 - Trang 1096-1099 - 2007
C. Martin1, G. Rius1, A. Llobera1, A. Voigt2, G. Gruetzner2, F. Pérez-Murano1
1Centro Nacional de Microelectrónica (IMB-CNM, CSIC), Campus de la Universitat, Autònoma de Barcelona, Bellaterra E-08193, Spain
2Micro Resist Technology GmbH, Berlı´n 12555, Germany

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