Electroluminescent materials

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Soc., 108, 1028, 10.1149/1.2427941 Haynes, 1954, Decay in photoconductivity associated with hole traps in N-type Si, Phys. Rev., 94, 1438 Henisch, 1962, EL. In Int. Series of Monographs on Semiconductors, 37 Ivey, 1963, EL and related effects, Advances in Electronics and Electron Phys., 8 Ivey, 1963, EL and related effects, Advances in Electronics and Electron Phys., 12 Ivey, 1963, EL and related effects, Advances in Electronics and Electron Phys., 62 Kazan, 1958, A solid state amplifying fluoroscope screen, RCA Rev., XIX, 19 Kazan, 1968, Image storage panels based on field effect control of conductivity, Proc. IEEE, 56, 285, 10.1109/PROC.1968.6272 Klick, 1957, Luminescence in solids, Solid State Phys., 5, 97, 10.1016/S0081-1947(08)60102-2 Korotkov, 1981, Blue EL in ZnSe MIS structure, Sov. Phys. Semicond., 15, 987 Kremheller, 1955, ZnS single crystals for phosphor research, Sylvania Tech., 8, 11 Lawther, 1980, Blue emitting S+ implanted Au-ZnS Schottky barrier diode, Jpn. J. Appl. Phys., 19, 939, 10.1143/JJAP.19.939 Lehmann, 1958, Particle size and efficiency of electroluminescent ZnS phosphors, J. Electrochem. Soc., 105, 585, 10.1149/1.2428668 Maeda, 1959, Origin of local high electric field in EL, Physica, 25, 721, 10.1016/S0031-8914(59)97499-3 May, 1981, Copper sulphide phases in EL phosphors, Electronic Displays Conf. Proc., Vol. 1, 82 Minami, 1979, M-S EL diodes in ZnO crystals, Jpn. J. Appl. Phys., 18, 1617, 10.1143/JJAP.18.1617 Morehead, 1967, 613 Nagy, 1956, Phenomena of EL, J. Phys. Rad., 17, 773, 10.1051/jphysrad:01956001708-9077300 Ohnishi, 1978, Thin film DC EL cell of Au/ZnSe:Mn/n-GaAs heterostructure with threshold voltage of 20 V, Jpn. J. Appl. Phys., 17, 1225, 10.1143/JJAP.17.1225 Pankove, 1964, Carrier transport across EL P-N junction in GaAs, J. Appl. Phys., 35, 1890, 10.1063/1.1713763 Pankove, 1977, EL, 14, 10.1007/3-540-08127-5 Pankove, 1977, EL, 17, 10.1007/3-540-08127-5 Pankove, 1977, EL, 142, 10.1007/3-540-08127-5 Pilkhun, 1965, EL and lasing action in GaAsxP1−x, J. Appl. Phys., 36, 684, 10.1063/1.1714202 Piper, 1952, EL of single crystals of ZnS:Cu, Phys. Rev., 87, 151, 10.1103/PhysRev.87.151 Piper, 1955, Theory of EL, Phys. Rev., 98, 1809, 10.1103/PhysRev.98.1809 Piper, 1958, EL, Vol. 6, 115 1973 Shockley, 1952, Statistics of the recombination of holes and electrons, Phys. Rev., 87, 835, 10.1103/PhysRev.87.835 Studer, 1955, Transparent phosphor coating, J. Opt. Soc. Am., 45, 493, 10.1364/JOSA.45.000493 Takata, 1981, DC EL in annealed thin film of sputtered ZnO, Jpn. J. Appl. Phys., 20, 1759, 10.1143/JJAP.20.1759 Tauninen, 1961, X-ray diffraction study of thin EL ZnS films grown by atomic layer epitaxy, Phys. Stat. Solidi, 67a, 573 Thomas, 1964, Pair spectra and edge emission in GaP, Phys. Rev., 133, A269, 10.1103/PhysRev.133.A269 Tonomura, 1973, MIS EL diodes in ZnTe prepared by Al vapour diffusion, J. Appl. Phys., 44, 4692, 10.1063/1.1662021 Ueda, 1980, In GaAs-InP double heterostructure LED, Appl. Phys. Lett., 36, 300, 10.1063/1.91469 Vecht, 1966, Vol. 3, 165 Vecht, 1970, DC EL in ZnS, J. Phys. D, 3, 105, 10.1088/0022-3727/3/2/202 Vecht, 1973, DC EL in ZnS and related compounds, J. Luminescence, 7, 213, 10.1016/0022-2313(73)90068-9 Vu Xuan, 1983, Role of earths in ZnO phosphors, Phys. Stat. Solidi, 78, K161, 10.1002/pssa.2210780263 Warren, 1983, A study of luminescence and electrical characteristics of films of ZnS doped with Mn, J. Luminescence, 28, 147, 10.1016/0022-2313(83)90041-8 Wheeler, 1973, EL from CdS MS, MIS and SIS devices, Solid State Elect., 16, 875, 10.1016/0038-1101(73)90093-2 Windischmann, 1970, EL of pure and doped alkali halides Yao, 1983, EL and PL properties of ZnSe thin films grown by molecular beam epitaxy, Jpn. J. Appl. Phys., 22, L144, 10.1143/JJAP.22.L144 Yu, 1978, ZnS:Er EL diodes, Sol. State Commun., 28, 835, 10.1016/0038-1098(78)91356-X Zalm, 1956, The EL of ZnS type phosphors, Philips Res. Rept., 11 Zalm, 1956, The EL of ZnS type phosphors, Philips Res. Rept., 353 Zalm, 1956, The EL of ZnS type phosphors, Philips Res. Rept., 417 Zhong, 1982, Low voltage, reverse biased diodes of Er-implanted and Nd-implanted ZnSe, J. Phys. D, 15, 705, 10.1088/0022-3727/15/4/323