Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2

Nature Physics - Tập 9 Số 3 - Trang 149-153 - 2013
Sanfeng Wu1, Jason Ross2, Gui‐Bin Liu3, Grant Aivazian1, Aaron M. Jones1, Zaiyao Fei1, Wenguang Zhu4, Di Xiao5, Wang Yao3, David Cobden1, Xiaodong Xu2
1Department of Physics, University of Washington, Seattle, Washington 98195 USA
2Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195, USA
3Department of Physics and Center of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
4Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
5Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

Tóm tắt

Từ khóa


Tài liệu tham khảo

Xiao, D., Chang, M-C. & Niu, Q. Berry phase effects on electronic properties. Rev. Mod. Phys. 82, 1959–2007 (2010).

Mak, K. F., Lui, C. H., Shan, J. & Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009).

Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).

Xiao, D., Yao, W. & Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007).

Yao, W., Xiao, D. & Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking. Phys. Rev. B 77, 235406 (2008).

Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).

Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2 . Nano Lett. 10, 1271–1275 (2010).

Souza, I. & Vanderbilt, D. Dichroic f-sum rule and the orbital magnetization of crystals. Phys. Rev. B 77, 054438 (2008).

Xiao, D., Liu, G-B., Feng, W., Xu, X. & Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012).

Zeng, H., Dai, J., Yao, W., Xiao, D. & Xiaodong, C. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotech. 7, 490–493 (2012).

Mak, K. F., He, K., Shan, J. & Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotech. 7, 494–498 (2012).

Cao, T., Feng, J., Shi, J., Niu, Q. & Wang, E. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012).

Akhmerov, A. R. & Beenakker, C. W. J. Detection of valley polarization in graphene by a superconducting contact. Phys. Rev. Lett. 98, 157003 (2007).

Rycerz, A., Tworzydlo, J. & Beenakker, C. W. J. Valley filter and valley valve in graphene. Nature Phys. 3, 172–175 (2007).

Zhu, Z-G. & Berakdar, J. Berry-curvature-mediated valley-Hall and charge-Hall effects in graphene via strain engineering. Phys. Rev. B 84, 195460 (2011).

Korn, T., Heydrich, S., Hirmer, M., Schmutzler, J. & Schuller, C. Low-temperature photocarrier dynamics in monolayer MoS2 . Appl. Phys. Lett. 99, 102109 (2011).

Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011).

Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451–10453 (2005).

Eda, G. et al. Photoluminescence from chemically exfoliated MoS2 . Nano Lett. 11, 5111–5116 (2011).

Cheiwchanchamnangij, T. & Lambrecht, W. R. L. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2 . Phys. Rev. B 85, 205302 (2012).

Zhu, Z. Y., Cheng, Y. C. & Schwingenschlögl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011).

Yoon, Y., Ganapathi, K. & Salahuddin, S. How good can monolayer MoS2 transistors be? Nano Lett. 11, 3768–3773 (2011).

Popov, I., Seifert, G. & Tománek, D. Designing electrical contacts to MoS2 monolayers: A computational study. Phys. Rev. Lett. 108, 156802 (2012).

Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2 . ACS Nano 5, 9934–9938 (2011).

Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2 . ACS Nano 4, 2695–2700 (2010).

Jiménez Sandoval, S., Yang, D., Frindt, R. F. & Irwin, J. C. Raman study and lattice dynamics of single molecular layers of MoS2 . Phys. Rev. B 44, 3955 (1991).

Chakraborty, B. et al. Symmetry-dependent phonon renormalization in monolayer MoS2 transistor. Phys. Rev. B 85, 161403 (2012).

Balocchi, A. et al. Full electrical control of the electron spin relaxation in GaAs quantum wells. Phys. Rev. Lett. 107, 136604 (2011).

Koralek, J. D. et al. Emergence of the persistent spin helix in semiconductor quantum wells. Nature 458, 610–614 (2009).