Electrical properties of p +/n + In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy

p +/n + In0.53Ga0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×103 Ω−1 cm−2), high peak current densities (793 A/cm2) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.