Yoneda, 1984, J. Crystal Growth, 67, 125, 10.1016/0022-0248(84)90141-6
Iida, 1985, J. Crystal Growth, 72, 51, 10.1016/0022-0248(85)90117-4
Wright, 1982, J. Crystal Growth, 59, 148, 10.1016/0022-0248(82)90316-5
Yao, 1983, Appl. Phys. Letters, 43, 499, 10.1063/1.94366
Blanconnier, 1981, J. Appl. Phys., 52, 6895, 10.1063/1.328641
Yoneda, 1984, Appl. Phys. Letters, 45, 1300, 10.1063/1.95126
Yoshikawa, 1984, Japan. J. Appl. Phys., 23, L388, 10.1143/JJAP.23.L388
Yoshikawa, 1984, Japan. J. Appl. Phys., 23, L424, 10.1143/JJAP.23.L424
Yoshikawa, 1985, J. Crystal Growth, 72, 13, 10.1016/0022-0248(85)90110-1
Dean, 1982, J. Crystal Growth, 59, 301, 10.1016/0022-0248(82)90341-4
Fuke, 1986, J. Appl. Phys., 59, 176, 10.1063/1.336443
Goto, 1986, Japan. J. Appl. Phys., 25, 1036, 10.1143/JJAP.25.1036
Kukimoto, 1968, J. Phys. Chem. Solids, 29, 935, 10.1016/0022-3697(68)90228-X
Thomas, 1981, Appl. Phys. Letters, 38, 736, 10.1063/1.92170
Aven, 1965, Appl. Phys. Letters, 7, 8, 10.1063/1.1754243
Olsen, 1979, Appl. Phys. Letters, 34, 528, 10.1063/1.90852
Oda, 1977, IEEE Trans. Electron Devices, ED-24, 956, 10.1109/T-ED.1977.18858
Samuelson, 1962, Phys. Rev., 125, 901, 10.1103/PhysRev.125.901
Gezci, 1980, J. Appl. Phys., 51, 1866, 10.1063/1.327734