Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors

Soochang You1, Anvar Tukhtaev1, Gergely Tarsoly2, Han Lin Zhao1, Xiao Lin Wang1, Fei Shan3, Jae-Yun Lee1, Jin Hee Lee1, Sung Il Jang1, Yong Jin Jeong4, Sung-Jin Kim1
1College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, Korea
2Department of Chemistry, Konkuk University, Seoul, Korea
3College of Ocean, Jiangsu University of Science and Technology, Zhenjiang, China
4Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, Korea

Tóm tắt

Solution processable metal oxide semiconductors offer opportunities for large area fabrication of transparent logic circuits without requiring expensive vacuum equipment. Indium zinc oxide (IZO) is one of the more popular research targets for use as active layer in thin-film transistors (TFTs). In this paper, we present our results on the fabrication of TFTs with IZO semiconductor film using spin-coating from the 1:1 molar ratio mixed solution of indium nitrate and zinc carbonate. We optimize the device fabrication process by studying the effect of stacking multiple layers on top of each other. The electrical characteristics of the TFTs are found to depend strongly on the number of the spin coating steps employed. The practical applicability of the TFTs is also demonstrated by fabricating a load-type inverter circuit and measuring its electrical response, modeling operation in digital circuitry.

Tài liệu tham khảo

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