Electric field dependence of pulsed THz emission from photoconductive antennas

C. Baker1, C.E. Norman2, J.A. Cluff3, W.R. Tribe3, B.E. Cole3, E.H. Linfield1, A.G. Davies1, D.D. Arnone3, M. Pepper4,1,5
1Semiconductor Physics Group, University of Cambridge, Cambridge, UK
2Toshiba Research Europe Ltd. Unit, Cambridge, UK
3Tera View Ltd., Cambridge, UK
4Toshiba Research Europe Limited, Cambridge, UK
5Tera View Limited, Cambridge, UK

Tóm tắt

It has been postulated that terahertz (THz) generation in photoconductive emitters is associated with electric field transients between the electrodes of the device. This is supported by experimental measurements showing enhanced generation with near-anode device excitation. In this work we present a detailed analysis of the dependence of device performance on the position of laser excitation for two designs of photoconductive emitter. These results are compared to new investigations using the technique of electron beam induced current (EBIC) measurements. EBIC gives an alternative means of examining the electric field within a device, and the results are compared for the full range of applied device bias.

Từ khóa

#Photoconductivity #Switches #Laser mode locking #Power system transients #Anodes #Substrates #Laser excitation #Bandwidth #Semiconductor lasers #Dipole antennas

Tài liệu tham khảo

10.1063/1.100792 doany, 0, Carrier Lifetime Versus Ion-Implantation Dose in Silicon-en-Sapphire, Appl Phys Lett, 50, 1987 10.1063/1.106153 10.1063/1.104695 10.1364/OL.21.001924 10.1063/1.99971 10.1109/3.121