Effects of the thickness of GaAs spacer layers on the structure of multilayer stacked InAs quantum dots

Journal of Crystal Growth - Tập 311 - Trang 258-262 - 2009
Hyung Seok Kim1, Ju Hyung Suh1, Chan Gyung Park1, Sang Jun Lee2, Sam Kyu Noh2, Jin Dong Song3, Yong Ju Park3, Won Jun Choi3, Jung Il Lee3
1Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Kyungbuk 790-784, Republic of Korea
2Quantum Dot Technology Laboratory, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-600, Republic of Korea
3Nano Device Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea

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Thông tin
Thông tin xuất bản

Journal of Crystal Growth

Tập 311

258-262

Thông tin tác giả