Effect of thermal annealing in air on scintillation properties of LuAG and LuAG:Pr

Open Physics - Tập 11 Số 1 - 2013
Kamil Brylew1, Winicjusz Drozdowski1, Marcin E. Witkowski1, Kei Kamada2, Takayuki Yanagida3, Akira Yoshikawa3
1Division of Optoelectronics, Institute of Physics, Nicolaus Copernicus University, Grudziadzka 5, 87-100, Torun, Poland
2Furukawa Co. Ltd.
3Institute of Multidisciplinary Research for Advanced Materials, Tokohu University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan

Tóm tắt

AbstractPure and Pr-activated Lu3Al5O12 (LuAG) crystals have been grown by the Czochralski method. In order to improve the scintillation properties, several samples have been annealed in air. Various annealing temperatures and periods of time have been tested to determine optimal conditions in the way of scintillation yield and energy resolution enhancement. The largest increase of yield of LuAG:Pr (17%), accompanied by a distinct decrease of resolution, has been observed after annealing at 1100°C for 48 h. On the contrary, in case of undoped LuAG no significant changes following thermal annealing have been noticed.

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