Effect of rapid thermal annealing on the properties of thin dielectric films of gadolinium, titanium, and erbium oxides on the silicon carbide surface
Tóm tắt
The effect of rapid thermal annealing on the properties of Ti, Ga, and Er oxide films on silicon carbide are studied by the methods of atomic force microscopy, monochromatic ellipsometry, optical absorption, and photoluminescence. The atomic composition of these films is analyzed as a function of the annealing time. The phase composition of the Ti, Ga, and Er oxide films on silicon carbide is shown to depend on the annealing time.
Tài liệu tham khảo
K. Hauffe, Oxidation of Metals (Plenum, New York, 1965; Metallurgiya, Moscow, 1968), Vol. 1.
V. V. Polyakov, A. M. Svetlichnyi, A. N. Kocherov, and A. A. Shelkunov, in Proceedings of the 4th International Scientific-Technical Conference on Microelectronic Transducers and Their Related Devices, Baku, 2003, pp. 62–64.
A. M. Svetlichnyi, V. V. Polyakov, and A. N. Kocherov, Proceedings of the 8th International Scientific and Technical Conference on Topical Problems in Solid-State Electronics and Microelectronics, Divnomorsk, 2002, p. 90.
Yu. Yu. Bacherikov, R. V. Konakova, A. N. Kocherov, et al., Zh. Tekh. Fiz. 73(5), 75 (2003) [Tech. Phys. 48, 598 (2003)].
L. S. Palatnik, et al., Fiz. Met. Metalloved. 11, 864 (1961).
Rare-Earth Oxide Films in MIM and MIS Structures, Ed. by Z. I. Kir’yashkina (Saratovsk. State Univ., Saratov, 1983) [in Russian].
L. V. Ushchanovskiĭ, Physics of Magnetic Films (Irkutsk. Univ., Irkutsk, 1970), Issue 2, pp. 49–53 [in Russian].
V. B. Lazarev, V. V. Sobolev, and I. S. Shaplygin, Chemical and Physical Properties of Simple Metal Oxides (Nauka, Moscow, 1983) [in Russian].
N. O. Anatskaya, L. A. Osadchev, S. P. Savel’ev, et al., Obz. Elektron. Tekh., Ser. 6: Materialy, No. 5 (1983).
A. A. Abramov, N. F. Kovtonyuk, E. N. Lebedev, et al., Obz. Elektron. Tekh., Ser. 6: Materialy, No. 14, 251 (1974).
I. S. Gorban’ and A. P. Krokhmal’, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1299 (2001) [Semiconductors 36, 1242 (2001)].
G. K. Safaraliev, Yu. N. Emirov, M. K. Kurbanov, and B. A. Bilalov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 929 (2000) [Semiconductors 34, 891 (2000)].
L. Patrick and W. J. Choyke, Phys. Rev. B 5, 3252 (1972).
W. J. Choyke and L. Patrick, Phys. Rev. B 4, 1843 (1971).
I. S. Gorban’ and S. N. Rud’ko, Fiz. Tverd. Tela (Leningrad) 5, 1368 (1963) [Sov. Phys. Solid State 5, 995 (1963)].