Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

sun, 2005, Phys. Rev. B, 71, 165310, 10.1103/PhysRevB.71.165310 Yang, 2008, Phys. Rev. Lett., 100, 056602, 10.1103/PhysRevLett.100.056602 Radovanovic, 2006, J. Appl. Phys., 99, 073905, 10.1063/1.2188052 Guo, 2005, Phys. Rev. B, 72, 045356, 10.1103/PhysRevB.72.045356 Glazov, 2005, Phys. Rev. B, 71, 155313, 10.1103/PhysRevB.71.155313 Dresselhaus, 1955, Phys. Rev., 100, 580, 10.1103/PhysRev.100.580 Rashba, 1960, Sov. Phys. Solid State, 2, 1109 Datta, 1990, Appl. Phys. Lett., 56, 885, 10.1063/1.102730 Faizabadi, 2012, J. Appl. Phys., 111, 093724, 10.1063/1.4714335 Miao, 2015, Phys. Chem. Chem. Phys., 17, 751, 10.1039/C4CP04599H Yamagishi, 2014, Phys. Rev. B, 90, 035306, 10.1103/PhysRevB.90.035306 Radovanović, 2006, J. Appl. Phys., 99, 73905, 10.1063/1.2188052 Gnanasekar, 2006, Europhys. Lett., 73, 786, 10.1209/epl/i2005-10456-8 Wang, 2002, J. Appl. Phys., 92, 4138, 10.1063/1.1505691 Li, 2006, Phys. Rev. B, 73, 205311, 10.1103/PhysRevB.73.205311 Kim, 2007, Phys. Rev. B, 76, 125305, 10.1103/PhysRevB.76.125305 Eric, 2008, J. Appl. Phys., 103, 083701, 10.1063/1.2904869 Sahu, 2010, J. Appl. Phys., 107, 113708, 10.1063/1.3391351 de Andrada e Silva, 1997, Phys. Rev. B, 55, 16293, 10.1103/PhysRevB.55.16293 Gnanasekar, 2005, Phys. Lett. A, 341, 495, 10.1016/j.physleta.2005.03.089 Shen, 1997, J. Phys. Condens. Matter, 9, 3151, 10.1088/0953-8984/9/15/008 Chuang, 1995 Wang, 2002, Appl. Phys. Lett., 80, 1400, 10.1063/1.1455146 Gong, 2007, J. Appl. Phys., 102, 73728 Vurgaftman, 2005, J. Appl. Phys., 97, 053707, 10.1063/1.1858876 Song, 2002, Phys. Rev. B, 66, 035207, 10.1103/PhysRevB.66.035207