Effect of annealing in oxidizing atmosphere on optical and structural properties of silicon suboxide thin films obtained by gas-jet electron beam plasma chemical vapor deposition method
Tài liệu tham khảo
Takagi, 1990, Quantum size effects on photoluminescence in ultrafine Si particles, Appl. Phys. Lett., 56, 2379, 10.1063/1.102921
Das, 2015, Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing, Phys. Chem. Chem. Phys., 17, 5063, 10.1039/C4CP05126B
Szekeres, 2009, Ellipsometric characterization of SiOx films with embedded Si nanoparticles, Vacuum, 84, 115, 10.1016/j.vacuum.2009.05.016
Soubane, 2015, Photoluminescence from low thermal budget silicon nano-crystals in silica, Nanotechnology, 26, 295201, 10.1088/0957-4484/26/29/295201
Gautam, 2009, Photoluminescence properties of SiOx thin films prepared by reactive electron beam evaporation from SiO and silica nanoparticles, J. Appl. Phys., 105, 73517, 10.1063/1.3104772
Perez-Wurfl, 2012, Silicon nanocrystals in an oxide matrix for thin film solar cells with 492 mV open circuit voltage, Sol. Energy Mater. Sol. Cells, 100, 65, 10.1016/j.solmat.2011.02.029
Herrera, 2015, Structural, compositional and electrical characterization of Si-rich SiOx layers suitable for application in light sensors, Mater. Sci. Semicond. Process., 37, 229, 10.1016/j.mssp.2015.03.040
Coyopol, 2016, Silicon excess and thermal annealing effects on structural and optical properties of co-sputtered SRO films, J. Lumin., 176, 40, 10.1016/j.jlumin.2016.02.033
Zacharias, 2002, Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach, Appl. Phys. Lett., 80, 661, 10.1063/1.1433906
Fu, 2016, Effect of SiO2 layers on electroluminescence from Si nanocrystal/SiO2 superlattices prepared using argon ion beam assisted sputtering, Vacuum, 126, 59, 10.1016/j.vacuum.2016.01.020
Wakayama, 1998, Nanoscale structural investigation of Si crystallites grown from silicon suboxide films by thermal annealing, J. Cryst. Growth, 183, 124, 10.1016/S0022-0248(97)00408-9
Jin, 2013, Modulation effect of microstructures in silicon-rich oxide matrix on photoluminescence from silicon nanoclusters prepared by different fabrication techniques, Appl. Phys. a, 113, 121, 10.1007/s00339-012-7496-z
San Andrés, 2005, Oxygen to silicon ratio determination of SiOxHy thin films, Thin Solid Films, 492, 232, 10.1016/j.tsf.2005.06.049
Chen, 2005, Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition, J. Appl. Phys., 97, 14913, 10.1063/1.1829789
Comedi, 2006, X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides, J. Appl. Phys., 99, 23518, 10.1063/1.2162989
López, 2012, Morphological, compositional, structural, and optical properties of Si-nc embedded in SiOx films, Nanoscale Res. Lett., 7, 604, 10.1186/1556-276X-7-604
Ivanda, 2013, Quantifying inhomogeneities in silicon-rich oxide thin films, SPIE Newsroom, 2
Baranov, 2016, Structural and optical properties of a-SiOx:H thin films deposited by the GJ EBP CVD method, Phys. Status Solidi A, 213, 1783, 10.1002/pssa.201532959
van Sebille, 2016, Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere, Nanotechnology, 27, 365601, 10.1088/0957-4484/27/36/365601
Nikitin, 2015, Optical and structural properties of Si nanocrystals in SiO2 films, Nanomaterials, 5, 614, 10.3390/nano5020614
Sopinskyy, 2015, formation of nanocomposites by oxidizing annealing of SiOx and SiOx <Er,F> films: ellipsometry and FTIR analysis, Nanoscale Res. Lett., 10, 232, 10.1186/s11671-015-0933-0
Huang, 2008, Influences of annealing temperature on the optical properties of SiOx thin film prepared by reactive magnetron sputtering, Appl. Surf. Sci., 255, 2006, 10.1016/j.apsusc.2008.06.141
Brongersma, 1998, Tuning the emission wavelength of Si nanocrystals in SiO2 by oxidation, Appl. Phys. Lett., 72, 2577, 10.1063/1.121423
Baranov, 2016, Synthesis and morphology of silicon oxide nanowires from a free jet activated by electron-beam plasma, J. Eng. Thermophys., 25, 239, 10.1134/S1810232816020090
Baranov, 2014, Solid-phase crystallization of high growth rate amorphous silicon films deposited by gas-jet electron beam plasma CVD method, Can. J. Phys., 92, 723, 10.1139/cjp-2013-0580
Evdokov, 2009, In situ time-resolved diffractometry at SSTRC, Nucl. Instrum. Methods Phys. Res. Sect. A Accel. Spectrom. Detect. Assoc. Equip., 603, 194, 10.1016/j.nima.2009.03.001
Birgin, 1999, Estimation of the optical constants and the thickness of thin films using unconstrained optimization, J. Comput. Phys., 151, 862, 10.1006/jcph.1999.6224
Gajović, 2008, Nanostructure of thin silicon films by combining HRTEM, XRD and Raman spectroscopy measurements and the implication to the optical properties, Appl. Surf. Sci., 254, 2748, 10.1016/j.apsusc.2007.10.014
Singh, 1990, The a-SiOx:Hy thin film system I: structural study by IR spectroscopy, J. Non-Cryst. Solids, 122, 223, 10.1016/0022-3093(90)90987-W
Song, 1998, Syntheses and optical properties of low-temperature SiOx and TiOx thin films prepared by plasma enhanced CVD, Vacuum, 51, 525, 10.1016/S0042-207X(98)00246-2
Dekkers, 2013, Infrared molar absorption coefficient of H2O stretching modes in SiO2, Thin Solid Films, 542, 8, 10.1016/j.tsf.2013.05.151
Maley, 1992, Critical investigation of the infrared-transmission-data analysis of hydrogenated amorphous silicon alloys, Phys. Rev. B, 46, 2078, 10.1103/PhysRevB.46.2078
Volodin, 2013, Quantitative analysis of hydrogen in amorphous silicon using Raman scattering spectroscopy, J. Raman Spectrosc., 44, 1760, 10.1002/jrs.4408
Beeman, 1985, Structural information from the Raman spectrum of amorphous silicon, Phys. Rev. B, 32, 874, 10.1103/PhysRevB.32.874
Jia, 2015, Accurate determination of the size distribution of Si nanocrystals from PL spectra, RSC Adv., 5, 55119, 10.1039/C5RA02805A
Wei, 2007, Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films, Vacuum, 81, 656, 10.1016/j.vacuum.2006.09.006
Bratus', 2001, Structural transformations and silicon nanocrystallite formation in SiOx films, Semiconductors, 35, 821, 10.1134/1.1385719
Swanepoel, 1983, Determination of the thickness and optical constants of amorphous silicon, J. Phys. E, 16, 1214
Szekeres, 2005, Silicon nanoparticles in thermally annealed thin silicon monoxide films, Mater. Sci. Eng. B, 124–125, 504, 10.1016/j.mseb.2005.08.124
Fang-qing, 1983, An investigation of the optical constants of GD a-SixC1−x:H films by the ellipsometric spectra, J. Non-Cryst. Solids, 59–60, 565, 10.1016/0022-3093(83)90646-4
Iacona, 2004, Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films, J. Appl. Phys., 95, 3723, 10.1063/1.1664026
Ding, 2014, Optically active defects in SiC, SiOx single layers and SiC/SiOx hetero-superlattices, Sol. Energy Mater. Sol. Cells, 129, 3, 10.1016/j.solmat.2013.10.012
Janotta, 2004, Doping and its efficiency in a-SiOx:H, Phys. Rev. B, 69, 115206, 10.1103/PhysRevB.69.115206
Gritsenko, 2008, Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides, Phys. Usp., 51, 699, 10.1070/PU2008v051n07ABEH006592
Undalov, 2016, On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0<x<2) with time-modulated dc magnetron plasma, Semiconductors, 50, 530, 10.1134/S1063782616040230
Ledoux, 2002, Photoluminescence of size-separated silicon nanocrystals: confirmation of quantum confinement, Appl. Phys. Lett., 80, 4834, 10.1063/1.1485302
Morales-Sánchez, 2010, Photoluminescence enhancement through silicon implantation on SRO-LPCVD films, Mater. Sci. Eng. B, 174, 119, 10.1016/j.mseb.2010.03.031
Yuan, 2011, Silicon nanocrystals as a photoluminescence down shifter for solar cells, Sol. Energy Mater. Sol. Cells, 95, 1224, 10.1016/j.solmat.2010.10.035