Effect of Zn-doping CdTe on the internal and external quantum efficiency: ab initio calculations
Tóm tắt
The photovoltaic properties depend on the internal (IQE) and external (EQE) quantum efficiency. However, to calculate this quantum efficiency theoretically, we have determined the optical and electronic properties of Cd1−xZnxTe bulk and CdTe thin film. CdTe thin film is immensely interesting narrow band gap semiconductor with high absorption 100 × 104 cm−1 for the visible solar spectrum having promising applications in new-generation electronics and photo-electronic devices. Cd1−xZnxTe bulk is a semiconductor with a narrow bandgap value. The band gap values decrease slightly linearly from 1.708 to 1.642 eV with increase of Zn content. Optical reflectivity and absorption are discussed in detail. The IQE and EQE quantum efficiency of CdTe thin film and Zn doping CdTe bulk are investigated and analyzed. Our results are more consistent with the experimental results.
Tài liệu tham khảo
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