Effect of Carbon Impurity on the Properties of Semi-insulating CdTe〈Cl〉 Single Crystals
Tóm tắt
The electrical properties, magnetic susceptibilities, and low-temperature photoluminescence spectra of semi-insulating CdTe{Cl} single crystals grown from the melt in graphitized and nongraphitized quartz ampules were compared. The crystals contaminated with carbon were found to be inhomogeneous and contain carbon-related deep centers affecting their detector performance. The possible mechanisms of compensation and defect complexing were discussed.
Tài liệu tham khảo
Zanio, K.R., Cadmium Telluride, Semicond. Semimet., 1978, vol. 13.
Korbutyak, D.V., Mel'nichuk, S.V., and Tkachuk, P.M., Impurity Defect Structure of Cl-Doped CdTe for Ionizing Radiation Detectors, Ukr. Fiz. Zh. (Ukr. Ed.), 1999, vol. 44, no. 6, pp. 730–737.
Hage-Ali, M. and Siffert, P., Status of Semi-insulating Cadmium Telluride for Nuclear Radiation Detectors, Nucl. Instrum. Methods Phys. Res., Sect. A, 1992, vol. 322, pp. 313–323.
Tkachuk, P.N., Tkachuk, V.I., Plyuta, D.I., and Raranskii, A.N., Cadmium Telluride Detectors for Nuclear Radiation, Neorg. Mater., 1996, vol. 32, no. 11, pp. 1353–1355 [Inorg. Mater. (Engl. Transl.), vol. 32, no. 11, pp. 1184-1186].
Korbutjak, D.V., Krylyuk, S.G., Tkachuk, P.M., et al., Growth and Characterization of High-Resistivity CdTe〈Cl〉, J. Cryst. Growth, 1999, vol. 197, pp. 659–662.
Agrinskaya, N.V., Arkad'eva, E.N., and Matveev, O.A., Luminescence of Cadmium Vacancy-Donor Complexes in CdTe Crystals, Fiz. Tekh. Poluprovodn. (Leningrad), 1971, vol. 5, no. 5, pp. 869–875.
Hwa-Yuh Shin and Cherng-Yuan Sun, The Exciton and Edge Emissions in CdTe Crystals, Mater. Sci. Eng., B, 1998, vol. 52, pp. 78–83.
Seto, S., Tanaka, A., Masa, Y., and Kawashima, M., Chlorine Related Photoluminescence Lines in High Resistivity Cl-Doped CdTe, J. Cryst. Growth, 1992, vol. 117, pp. 271–275.
Savitskii, A.V., Tkachuk, P.N., Chobotar, V.I., et al., Exciton Photoluminescence and Conductivity of Te-Rich Cadmium Telluride Crystals, Izv. Akad. Nauk SSSR, Neorg. Mater., 1990, vol. 26, no. 12, pp. 2661–2663.
Worshech, L., Ossau, W., Fisher, F., et al., Cadmium Vacancy Related Defects in MBE Grown CdTe, J. Cryst. Growth, 1996, vol. 161, pp. 134–138.
Takebe, T., Saraie, J., and Matsunami, H., Detailed Characterization of Deep Centers in CdTe: Photoionization and Thermal Ionization Properties, J. Appl. Phys., 1982, vol. 53, no. 1, pp. 457–469.
Matlak, V.V., Ilashchuk, M.I., Parfenyuk, O.A., et al., Electrical Conductivity of Semi-insulating CdTe, Fiz. Tekh. Poluprovodn. (Leningrad), 1977, vol. 11, no. 12, pp. 2287–2291.
Neu, G., Marfaing, Y., et al., Study of Acceptor States in CdTe by Donor-Acceptor Pair Excitation Luminescence, J. Lumin., 1980, vol. 21, no. 3, pp. 293–304.
Gorelik, S.S. and Dashevskii, M.Ya., Materialovedenie poluprovodnikov i metallovedenie (Semiconductor Materials Research and Physical Metallurgy), Moscow: Metallurgiya, 1973.
Tatle, R.S., Electron Spin Resonance Studies, Physics and Chemistry of II-VI Compounds, Aven, M. and Prener, J.S., Eds., Amsterdam: North-Holland, 1967. Translated under the title Fizika i khimiya soedinenii AIIBVI, Moscow: Mir, 1970, pp. 208-245.
Agrinskaya, N.V. and Matveev, O.A., On the Mechanism of Complete Compensation in Li-and Cl-Doped CdTe Crystals, Fiz. Tekh. Poluprovodn. (Leningrad), 1987, vol. 21, no. 3, pp. 542–545.