Dual-collector magnetotransistor optimized with respect to injection modulation

Sensors and Actuators - Tập 4 - Trang 155-163 - 1983
R.S. Popović1, H. Baltes2
1Zentrale Forschung und Entwicklung, LGZ Landis & Gyr Zug AG, CH-6301 Zug, Switzerland
2Department of Electrical Engineering, University of Alberta, Edmonton, Alberta T6G 2E1 Canada

Tóm tắt

Từ khóa


Tài liệu tham khảo

a V. Zieren, S. Kordić and S. Middelhoek, Comment on magnetic transistor behaviour explained by modulation of emitter injection, not carrier deflection

Vinal, 1982, Response to above comment …, IEEE Electron Device Letters, 394

Popović, 1982, Enhancement of sensitivity of lateral magnetotransistors, Helvetica Physica Acta, 55, 599

Popović, 25271983, A bipolar magnetotransistor in CMOS technology, Proc. XI Yugoslav Conf. on Microelectronics — MIEL 83, 299

Popović, 1983, An investigation of the sensitivity of lateral magnetotransistors, IEEE Electron Device Letters, 51, 10.1109/EDL.1983.25644

Mitnikova, 1978, Investigation of the characteristics of silicon lateral magnetotransistors with two measuring collectors, Sov. Phys. Semicond., 12, 26

Vinal, 1982, Magnetic transistor behavior explained by modulation of emitter injection, not carrier deflection, IEEE Electron Device Letters, 203, 10.1109/EDL.1982.25551

Popović, 1978, Metal-N-type semiconductor ohmic contact with a shallow N+ surface layer, Solid-State Electronics, 21, 1133, 10.1016/0038-1101(78)90349-0

Fluitman, 8111982, A survey of solid-state magnetic field sensors

Sze, 1969

Vinal, 1982, Bipolar magnetic sensors, Proc. IEEE International Electron Devices Meeting—IEDM 82, 308

L. E. Clark, Semiconductor magnetic transducers, U.S. Pat. 4 100 563 (Jul. 11, 1978).