Dopant emission mechanism and the effects of host materials on the behavior of doped organic light-emitting diodes

IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1540-1544 - 2002
Chengfeng Qiu1, Haiying Chen1, Man Wong1, H.S. Kwok1
1Center for Display Research, Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China

Tóm tắt

Organic light-emitting diodes made of tris-8-(hydroxyquinoline) aluminum as the electron-transport layers, N, N'-diphenyl-N, N' bis (3-methylphenyl)-1, 1'-biphenyl-4,4'-diamine (TPD) as the hole-transport layers, and 2-1, 1-dimethylethyl-62-2, 3, 6, 7-tetrahydro-1, 1, 7, 7-tetramethyl-1H, 5H-benzo(ij) quinolizin-9-yl ethenyl-4H-pyran-4-ylidene propanedinitrile (DCJTB) as the guest dopant have been studied. It is determined that (a) emission from guest DCJTB in a host transport material results primarily from separate trapping of holes and electrons, rather than the more commonly proposed Forster transfer mechanism, (b) DCJTB is a more efficient hole than electron trap, and (c) the lifetime of a doped device is longer when TPD is used as the host material.

Từ khóa

#Light-emitting diodes #Charge carrier lifetime #Electroluminescence

Tài liệu tham khảo

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