van der Merwe, 1963, J. Appl. Phys., 34, 117, 10.1063/1.1729050
van der Merwe, 1963, J. Appl. Phys., 34, 123, 10.1063/1.1729051
Jesser, 1967, Phys. Stat. Sol., 19, 95, 10.1002/pssb.19670190110
Jesser, 1967, Phil. Mag., 15, 1097, 10.1080/14786436708222752
Jesser, 1968, Phil. Mag., 17, 461, 10.1080/14786436808217735
Jesser, 1968, Phil. Mag., 17, 595, 10.1080/14786436808217745
Matthews, 1970, J. Appl. Phys., 41, 3800, 10.1063/1.1659510
Matthews, 1970, Thin Solid Films, 5, 187, 10.1016/0040-6090(70)90076-3
Haasen, 1957, Acta Metall., 5, 598, 10.1016/0001-6160(57)90129-3
Fitzgerald, 1989, J. Vacuum Sci. Technol. B, 7, 782, 10.1116/1.584600
Abrahams, 1972, Appl. Phys. Letters, 21, 185, 10.1063/1.1654336
Esaki, 1970, IBM J. Res. Develop., 14, 61, 10.1147/rd.141.0061
Matthews, 1974, J. Crystal Growth, 27, 118
Cherns, 1973, Scripta Metall., 7, 489, 10.1016/0036-9748(73)90101-4
Yagi, 1971, J. Crystal Growth, 9, 84, 10.1016/0022-0248(71)90214-4
Matthews, 1975, J. Vacuum Sci. Technol., 12, 126, 10.1116/1.568741
Matthews, 1976, Thin Solid Film, 33, 253, 10.1016/0040-6090(76)90085-7
Hagen, 1978, Appl. Phys., 17, 85, 10.1007/BF00885035
Strunk, 1979, Appl. Phys., 18, 67, 10.1007/BF00935905
People, 1985, Appl. Phys. Letters, 47, 322, 10.1063/1.96206
People, 1986, Appl. Phys. Letters, 49, 229, 10.1063/1.97637
Gilmer, 1987, J. Met., 39, 19
Fritz, 1987, Appl. Phys. Letters, 51, 1080, 10.1063/1.98746
Dodson, 1987, Appl. Phys. Letters, 51, 1325, 10.1063/1.98667
Dodson, 1988, Appl. Phys. Letters, 52, 852, 10.1063/1.99658
Dodson, 1988, Appl. Phys. Letters, 53, 37, 10.1063/1.100115
Jesser, 1968, Phil. Mag., 17, 475, 10.1080/14786436808217736
Abrahams, 1969, J. Mater. Sci., 4, 223, 10.1007/BF00549922
Abrahams, 1975, J. Appl. Phys., 46, 4259, 10.1063/1.321409
Matthews, 1977, J. Vacuum Sci. Technol., 14, 989, 10.1116/1.569409
Orders, 1987, Appl. Phys. Letters, 50, 980, 10.1063/1.98004
Fritz, 1987, Appl. Phys. Letters, 51, 1004, 10.1063/1.98984
Matthews, 1979, Vol. 2, 503
Adachi, 1982, J. Appl. Phys., 53, 8775, 10.1063/1.330480
Kohama, 1988, Appl. Phys. Letters, 52, 380, 10.1063/1.99472
Salih, 1985, Appl. Phys. Letters, 46, 419, 10.1063/1.95598
Hull, 1988, Appl. Phys. Letters, 52, 1605, 10.1063/1.99055
Bielgelsen, 1988, J. Appl. Phys., 61, 1856, 10.1063/1.338029
Ishida, 1987, Japan. J. Appl. Phys., 26, L163, 10.1143/JJAP.26.L163
Cullity, 1978, Elements of X-ray Diffraction, 268
Petroff, 1978, J. Crystal Growth, 43, 628, 10.1016/0022-0248(78)90052-0
Yamazaki, 1982, J. Appl. Phys., 53, 4761, 10.1063/1.331305
Komiya, 1983, J. Crystal Growth, 61, 362, 10.1016/0022-0248(83)90373-1
Yamazaki, 1983, J. Appl. Phys., 55, 3478, 10.1063/1.332957
Gourley, 1988, Appl. Phys. Letters, 52, 377, 10.1063/1.99471
Orders, 1987, Appl. Phys. Letters, 50, 980, 10.1063/1.98004
Lum, 1987, Appl. Phys. Letters, 51, 36, 10.1063/1.98878
Fritz, 1985, Appl. Phys. Letters, 46, 987, 10.1063/1.95783
Anderson, 1987, Appl. Phys. Letters, 51, 752, 10.1063/1.98856
Gourley, 1985, Appl. Phys. Letters, 47, 482, 10.1063/1.96099
Das, 1985, J. Appl. Phys., 58, 341, 10.1063/1.335682
Gal, 1987, J. Appl. Phys., 62, 3898, 10.1063/1.339236
Gal, 1988, Appl. Phys. Letters, 53, 113, 10.1063/1.100385
Kato, 1986, J. Appl. Phys., 59, 588, 10.1063/1.336617
Kato, 1986, Japan. J. Appl. Phys., 25, 1327, 10.1143/JJAP.25.1327
Asai, 1983, J. Appl. Phys., 54, 2052, 10.1063/1.332252
Enatsu, 1987, Japan. J. Appl. Phys., 26, L1468, 10.1143/JJAP.26.L1468
Picraux, 1983, Appl. Phys. Letters, 43, 930, 10.1063/1.94184
Picraux, 1983, Appl. Phys. Letters, 43, 1020, 10.1063/1.94214
Chami, 1987, J. Appl. Phys., 62, 3718, 10.1063/1.339254
Hishida, 1987, J. Appl. Phys., 62, 4460, 10.1063/1.339034
Leamy, 1982, J. Appl. Phys., 53, R51, 10.1063/1.331667
Shinohara, 1985, Japan. J. Appl. Phys., 24, L711, 10.1143/JJAP.24.L711
Shinohara, 1985, Japan. J. Appl. Phys., 24, L818, 10.1143/JJAP.24.L818
Ito, 1986, Japan. J. Appl. Phys., 25, L421, 10.1143/JJAP.25.L421
Fitzgerald, 1990, J. Electron. Mater., 19, 949, 10.1007/BF02652921
Yacobi, 1986, J. Appl. Phys., 59, R1, 10.1063/1.336491
Chin, 1982, J. Electrochem. Soc., 129, 369, 10.1149/1.2123850
Marek, 1985, J. Electrochem. Soc., 132, 1502, 10.1149/1.2114153
Chin, 1979, Appl. Phys. Letters, 34, 476, 10.1063/1.90840
Carlson, 1974, J. Phys. E, 7, 98, 10.1088/0022-3735/7/2/009
Pfefferkorn, 1980, Scanning Electron Microsc., 1, 251
Trigg, 1985, Scanning Electron. Microsc., 3, 1011
Pennycook, 1980, Phil. Mag. A, 41, 589, 10.1080/01418618008239335
Franzosi, 1986, J. Crystal Growth, 75, 521, 10.1016/0022-0248(86)90098-9
Franzosi, 1985, Mater. Letters, 3, 425, 10.1016/0167-577X(85)90132-6
Petroff, 1978, Scanning Electron. Microsc., 1, 325
Petroff, 1980, J. Microsc., 118, 255, 10.1111/j.1365-2818.1980.tb00272.x
Petroff, 1981, Inst. Phys. Conf. Ser. No., 61, 501
Weng, 1989, J. Appl. Phys., 66, 2217, 10.1063/1.344272
Ballingall, 1990, J. Electron. Mater., 19, 509, 10.1007/BF02651271
Elman, 1989, Appl. Phys. Letters, 55, 1659, 10.1063/1.102279
Grundmann, 1990, J. Vacuum Sci. Technol. B, 8, 751, 10.1116/1.585005
Whaley, 1988, J. Vacuum Sci. Technol. B, 6, 625, 10.1116/1.584416
Radulescu, 1989, J. Vacuum Sci. Technol. B, 7, 111, 10.1116/1.584432
Drigo, 1989, J. Appl. Phys., 66, 1975, 10.1063/1.344335
Whaley, 1990, Appl. Phys. Letters, 57, 144, 10.1063/1.103966
Kohama, 1988, Japan. J. Appl. Phys., 26, L1944, 10.1143/JJAP.26.L1944
Kasper, 1975, Thin Solid Films, 44, 357, 10.1016/0040-6090(77)90443-6
Hull, 1988, Appl. Phys. Letters, 52, 1605, 10.1063/1.99055
Eaglesham, 1988, Appl. Phys. Letters, 53, 2083, 10.1063/1.100288
van der Leur, 1988, J. Appl. Phys., 64, 3043, 10.1063/1.341568
Houghton, 1990, J. Appl. Phys., 67, 1850, 10.1063/1.345613
Tuppen, 1989, Thin Solid Films, 183, 133, 10.1016/0040-6090(89)90438-0
Perovic, 1989, Thin Solid Films, 183, 141, 10.1016/0040-6090(89)90439-2
Pindoria, 1990, J. Vacuum Sci. Technol. B, 8, 21, 10.1116/1.584860
Freund, 1989, Mater. Res. Soc. Symp. Proc., 130, 139, 10.1557/PROC-130-139
Fitzgerald, 1988, J. Appl. Phys., 63, 693, 10.1063/1.340059
Eaglesham, 1989, Phys. Rev. Letters, 62, 187, 10.1103/PhysRevLett.62.187
Tuppen, 1990, Appl. Phys. Letters, 56, 54, 10.1063/1.102645
Chang, 1989, J. Appl. Phys., 66, 2993, 10.1063/1.344183
Breen, 1989, J. Vacuum Sci. Technol. B, 7, 758, 10.1116/1.584640
Kroemer, 1989, J. Crystal Growth, 95, 96, 10.1016/0022-0248(89)90359-X
Tachikawa, 1990, Appl. Phys. Letters, 56, 484, 10.1063/1.102773
Ploog, 1986, J. Crystal Growth, 79, 887, 10.1016/0022-0248(86)90569-5
Okamoto, 1987, Japan. J. Appl. Phys., 26, 315, 10.1143/JJAP.26.315
Drummond, 1982, J. Appl. Phys., 53, 1238, 10.1063/1.330537
Fischer, 1984, IEEE Trans. Electron Devices, ED-31, 1028, 10.1109/T-ED.1984.21655
Zipperian, 1983, IEDM Proceedings, 696
Rosenberg, 1985, IEEE Electron Device Letters, EDL-6, 491, 10.1109/EDL.1985.26205
Henderson, 1986, IEEE Electron Device Letters, EDL-7, 649, 10.1109/EDL.1986.26507
Okamoto, 1987, Japan. J. Appl. Phys., 26, 539, 10.1143/JJAP.26.539
Liu, 1987, J. Crystal Growth, 81, 359, 10.1016/0022-0248(87)90417-9
Pearsall, 1986, IEEE Electron Device Letters, EDL-7, 308, 10.1109/EDL.1986.26383
People, 1986, IEEE J. Quantum Electron, QE-22, 1696, 10.1109/JQE.1986.1073152
Enquist, 1987, J. Crystal Growth, 81, 378, 10.1016/0022-0248(87)90420-9
Lee, 1986, IEEE Electron Device Letters, EDL-17, 683, 10.1109/EDL.1986.26519
Ramberg, 1987, J. Appl. Phys., 61, 1234, 10.1063/1.338179
Temkin, 1981, J. Appl. Phys., 52, 5377, 10.1063/1.329398
Yamakoshi, 1981, IEEE J. Quantum Electron, QE-17, 167, 10.1109/JQE.1981.1071053
Iyer, 1989, IEEE Trans. Electron Devices, 36, 2043, 10.1109/16.40887
Veda, 1982, J. Appl. Phys., 53, 2991, 10.1063/1.331039
Veda, 1982, J. Appl. Phys., 53, 9170, 10.1063/1.330429
Chin, 1983, Appl. Phys. Letters, 42, 1031, 10.1063/1.93831
Ueda, 1980, J. Appl. Phys., 51, 5316, 10.1063/1.327445
Veda, 1985, J. Appl. Phys., 58, 3996, 10.1063/1.335576
Veda, 1985, J. Appl. Phys., 57, 1523, 10.1063/1.334466
Chu, 1988, J. Appl. Phys., 63, 611, 10.1063/1.340100
Nannichi, 1974, J. Crystal Growth, 27, 126, 10.1016/S0022-0248(74)80056-4
Hiyamizu, 1979, Surface Sci., 86, 137, 10.1016/0039-6028(79)90388-1
Katsumoto, 1985, Japan. J. Appl. Phys., 24, 636, 10.1143/JJAP.24.636
Fang, 1990, J. Appl. Phys., 68, R31, 10.1063/1.346284
Deppe, 1987, Appl. Phys. Letters, 51, 1271, 10.1063/1.98702
Won, 1987, J. Appl. Phys., 62, 3860, 10.1063/1.339230
Yamaguchi, 1986, J. Appl. Phys., 59, 1751, 10.1063/1.336439
Ashizawa, 1988, J. Appl. Phys., 64, 4065, 10.1063/1.341313
Crumbaker, 1989, Appl. Phys. Letters, 54, 140, 10.1063/1.101209
Fitzgerald, 1989, J. Appl. Phys., 65, 2220, 10.1063/1.342834
Fitzgerald, 1988, Appl. Phys. Letters, 52, 1496, 10.1063/1.99110
Fitzgerald, 1990, Mater. Res. Soc. Symp. Proc., 160, 59, 10.1557/PROC-160-59
Rajan, 1987, J. Appl. Phys., 62, 1713, 10.1063/1.339598
Fitzgerald, 1991, Appl. Phys. Letters, 59, 811, 10.1063/1.105351
Dodson, 1988, Appl. Phys. Letters, 53, 37, 10.1063/1.100115
