Dislocation-related photoluminescence in silicon

R. Sauer1, J. Weber1, Jano Stolz1, E. R. Weber2, K.‐H. Küsters2, H. Alexander2
1Physikalisches Institut (Teil 4), Universität Stuttgart, Stuttgart 80, Fed. Rep. Germany
2Abteilung für Metallphysik im II. Physikalischen Institut, Universität Köln, Köln 41, Fed. Rep. Germany

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Spectrum and sample history by courtesy of H. Conzelmann (private communication)

Sample and sample data from L.C. Kimerling (AT&T Bell Laboratories, USA)

Samples from D. B�uerle (University of Linz, Austria); description of crystal growth in D. B�uerle, P. Irsigler, G. Leyendecker, H. Noll, D. Wagner: Appl. Phys. Lett.40, 819 (1982)

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Same treatment as in [11 and 12]

Same treatment as in [25]

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See, for details, the discussion in K. Thonke, J. Weber, J. Wagner, R. Sauer: Physica116B, 252 (1983)

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