Direct Measurement of the Softening of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">V</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Si at Low Temperature

American Physical Society (APS) - Tập 148 Số 2 - Trang 662-664
J. R. Patel1, B. W. Batterman1
1Bell Telephone Laboratories, Murray Hill, New Jersey

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Tài liệu tham khảo

B. W. Batterman, 1964, Phys. Rev. Letters, 13, 390, 10.1103/PhysRevLett.13.390

B. W. Batterman, 1966, Phys. Rev., 145, 296, 10.1103/PhysRev.145.296

L. Testardi, 1965, Phys. Rev. Letters, 15, 537, 10.1103/PhysRevLett.15.250

D. B. Novotny, 1965, Acta Met., 13, 881, 10.1016/0001-6160(65)90079-9

J. R. Patel, 1966, J. Appl. Phys., 3447, 10.1063/1.1708879