Diode-pumped Nd:GAGG-LBO laser at 531 nm

Laser Physics - Tập 22 - Trang 485-488 - 2012
J. Zou1, H. Chu2, L. R. Wang3
1Electronic and Information Engineering College, Changchun University, Changchun, China
2College of Quartermaster Technology, Jilin University, Changchun, China
3Management Office of Scientific Research, Changchun University, Changchun, China

Tóm tắt

We report a green laser at 531 nm generation by intracavity frequency doubling of a continuous wave (cw) laser operation of a 1062 nm Nd:GAGG laser under in-band diode pumping at 808 nm. A LiB3O5 (LBO) crystal, cut for critical type I phase matching at room temperature is used for second harmonic generation of the laser. At an incident pump power of 18.5 W, as high as 933 mW of cw output power at 531 nm is achieved. The fluctuation of the green output power was better than 3.5% in the given 4 h.

Tài liệu tham khảo

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