Diffusion length and interface recombination velocity measurement of a GaAs solar cell using two emitter fabrications and quantum yield

Solar Cells - Tập 28 - Trang 223-232 - 1990
L.D. Partain1, D.D. Liu1, M.S. Kuryla1
1Varian Research Center, Palo Alto, CA 94303 U.S.A.

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