Difference of soft error rates in SOI SRAM induced by various high energy ion species
Tài liệu tham khảo
Colinge, 1997
Assaderaghi, 1999, Electrochem. Soc. Ser., 99, 1
Walsh, 2001, Nucl. Instr. and Meth. B, 181, 305, 10.1016/S0168-583X(01)00486-4
Vizkelethy, 2005, Nucl. Instr. and Meth. B, 231, 467, 10.1016/j.nimb.2005.01.102
Massengill, 1990, IEEE Electron Dev. Lett., 11, 98, 10.1109/55.46941
Iwamatsu, 2000, Jpn. J. Appl. Phys., 39, 2236, 10.1143/JJAP.39.2236
Abo, 2001, Nucl. Instr. and Meth. B, 181, 320, 10.1016/S0168-583X(01)00489-X
Takai, 1999, Nucl. Instr. and Meth. B, 158, 432, 10.1016/S0168-583X(99)00388-2
Takai, 1999, Electrochem. Soc. Ser., 99, 305
Abo, 2005, Nucl. Instr. and Meth. B, 231, 482, 10.1016/j.nimb.2005.01.104
Satoshi Abo, Yoshiaki Mokuno, Atsushi Kinomura, Shinobu Onoda, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Mikio Takai, in: Proceedings of the 8th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 2008, p. 183.
Abo, 2010, Nucl. Instr. and Meth. B, 268, 2074, 10.1016/j.nimb.2010.02.027
Satoshi Abo, Naoyuki Masuda, Fujio Wakaya, Shinobu Onoda, Takahiro Makino, Toshio Hirao, Takeshi Ohshima, Toshiaki Iwamatsu, Hidekazu Oda, Mikio Takai, Nucl. Instr. and Meth. B, in press, doi:10.1016/j.nimb.2011.02.053.
J. Ziegler, <http://www.srim.org>.