Difference of soft error rates in SOI SRAM induced by various high energy ion species

Elsevier BV - Tập 273 - Trang 262-265 - 2012
Satoshi Abo1, Naoyuki Masuda1, Fujio Wakaya1, Tivadar Lohner1, Shinobu Onoda2, Takahiro Makino2, Toshio Hirao2, Takeshi Ohshima2, Toshiaki Iwamatsu3, Hidekazu Oda3, Mikio Takai1
1Center for Quantum Science and Technology Under Extreme Conditions, Osaka University, 1-3, Machikaneyama, Toyonaka, Osaka 560-8531, Japan
2Semiconductor Analysis and Radiation Effects Group, Environment and Industrial Materials Research Division, Quantum Beam Science Directorate, Japan Atomic Energy Agency, 1233 Watanuki-machi, Takasaki, Gunma 370-1292, Japan
3Advanced Device Technology Department, Production and Technology Unit, Devices & Analysis Technology Division, Renesas Electronics Corporation, 751, Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan

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