Dielectric and elastic responses of nanostructured sodium nitrite in a porous glass

Allerton Press - Tập 71 - Trang 1404-1407 - 2007
L. N. Korotkov1, V. S. Dvornikov1, V. A. Dyad’kin1, A. A. Naberezhnov2, A. A. Sysoeva2
1Voronezh State Technical University, Voronezh, Russia
2Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia

Tóm tắt

The dielectric and elastic properties of the SiO2-NaNO2 nanocomposite obtained by incorporation of sodium nitrite into a porous glass matrix with an average pore diameter of ≈7 nm have been investigated in the temperature range 300–550 K. A significant softening of the shear modulus has been revealed in the temperature range 380–520 K, which corresponds to the premelting region of the embedded material. Analysis of the dielectric response spectra at frequencies from 1 Hz to 2.5 MHz has revealed four relaxation processes, two of which are thermally activated. The nature of the relaxation processes is discussed.

Tài liệu tham khảo

Kumzerov, Y. and Vakhrushev, S., Encyclopedia of Nanoscience and Nanotechnology, Nalwa, H.S., Ed., Am. Sci. Publ., 2003, vol. 10, p. 1.

Golosovsky, I.V., Fokin, A.V., Kumzerov, Yu.A., et al., Phys. Rev. Lett., 1755, vol. 89, 175 503-1.

Naberezhnov, A., Dorner, B., Fokin, A., et al., Eur. Phys. J. E, 2003, vol. 12, p. 21.

Kutnjak, Z., Vodopivec, B., Blinc, R., et al., J. Chem. Phys., 2005, vol. 123, 084 708.

Colla, E.V., Fokin, A.V., and Kumzerov, Yu.A., Solid State Commun., 1997, vol. 103, p. 127.

Beskrovny, A., Golosovsky, I., Fokin, A., et al., Appl. Phys. A, Suppl., 2002, vol. 74, p. 1001.

Vakhrushev, S.B., Kumzerov, Yu.A., Fokin, A.V., et al., Phys. Rev. B: Condens. Matter Mater. Phys., 2004, vol. 70, 132102-1.

Vakhrushev, S.B., Koroleva, E.Yu., Kumzerov, Yu.A., et al., Nanotekhnika, 2006, vol. 1, p. 18.

Smolenskii, G.A., Bokov, V.A., and Isupov, V.A., Fizika segnetoelektricheskikh yavlenii (Physics of Ferroelecric Phenomena), Leningrad: Nauka, 1985.

Pan’kova, S.V., Poborchii, V.V., and Solov’ev, V.G., J. Phys.: Condens. Matter, 1996, vol. 8, p. L203.

Baryshnikov, S.V., Stukova, E.V., and Charnaya, E.V., Fiz. Tverd. Tela (St. Petersburg), 2006, vol. 48, no. 3, p. 551 [Phys. Solid State (Engl. Transl.), vol. 48, no. 3, p. 593].

Balabinskaya, A.S., Ivanova, E.N., Ivanova, M.S., et al., Fiz. Khim. Stekla, 2005, vol. 31, no. 3, p. 441.

Gridnev, S.A., Darinskii, B.M., and Postnikov, V.S., Ferroelectrics, 1976, vol. 14, p. 583.

Asao, Ya., Yoshida, T., Ando, R., and Sawada, S., J. Phys. Soc. Jpn., 1964, vol. 19, no. 3, p. 632.

Yoon, S., Yoon, J.-G., and Kwun, S.-I., J. Korean Phys. Soc., 1986, vol. 19, no. 3, p. 244.

Oreshkin, P.T., Fizika poluprovodnikov i dielektrikov (Physics of Semiconductors and Dielectrics), Moscow: Vyssh. Shkola, 1977.

Thông tin
Thông tin xuất bản

Allerton Press

Tập 71

1404-1407

Thông tin tác giả