Chaonan Lin1, Ying‐Jie Lu1, Xun Yang1, Yongzhi Tian1, Chaojun Gao1, Junlu Sun1, Lin Dong1, Fang Zhong2, Weida Hu2, Chongxin Shan1
1Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001 China
2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
Tóm tắt
AbstractSingle‐crystalline diamond wafers are synthesized, and all‐carbon solar‐blind photodetectors are constructed based on the diamond with interdigitated graphite as electrodes. The graphite electrodes are made by laser‐induced graphitization of the diamond. The peak responsivity of the photodetector is 21.8 A W−1, and detectivity is 1.39 × 1012 cm Hz1/2 W−1 when the bias voltage is 50 V, it is noted that both of these are among the best values ever reported for diamond‐based photodetectors. The photodetectors are employed as the sensing pixels in an imaging system, and a clear image is obtained, which is the first report on solar‐blind imaging of diamond photodetectors. The results reported in this paper provide a facile approach to high‐performance diamond solar‐blind photodetectors and their applications in solar‐blind imaging, thus may address a significant step toward the preparation and application of diamond photodetectors.
