Diagonal and vertical far-infrared transitions from quantum cascade emitters

Proceedings, IEEE Tenth International Conference on Terahertz Electronics
S.S. Dhillon1,2, A.G. Davies3, D.D. Arnone4, H.E. Beere3, D.A. Ritchie5, E.H. Linfield6
1Thales Research and Technology Limited, Orsay, France
2University of Cambridge, Cambridge, UK
3Cavendish Laboratory, University of Cambridge, Cambridge, UK
4Teravie Limited, Cambridge, UK
5Department of Mechanical Engineering Faculty of Engineering, Kansai University, Suita, Osaka, Japan
6EECS Department, University of California Berkeley, Berkeley, CA, USA

Tóm tắt

We report a study of a far-infrared GaAs-Al/sub 0.15/Ga/sub 0.85/As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identified by correlation with bandstructure calculations, electrical characteristics and the width of the peaks. Further, the importance of contact resistance on the spectra was shown.

Từ khóa

#Quantum cascade lasers #Phonons #Optical scattering #Electric variables #Contact resistance #Electroluminescent devices #Temperature #Stimulated emission #Particle scattering #Helium

Tài liệu tham khảo

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Proceedings, IEEE Tenth International Conference on Terahertz Electronics

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