Device Size-Dependent Improved Resistive Switching Memory Performance

shang, 2006, Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag La<formula formulatype="inline"><tex Notation="TeX">$_{0.7}$</tex></formula> Ca <formula formulatype="inline"><tex Notation="TeX">$_{0.3}$</tex></formula> MnO<formula formulatype="inline"><tex Notation="TeX">$_3$</tex></formula> Pt heterostructures, Phys Rev B, 73, 245427, 10.1103/PhysRevB.73.245427

10.1088/0957-4484/22/25/254022

10.1017/CBO9781139163903

lee, 2008, Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO <formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula> based RRAM, Proc IEEE Int Electron Devices Meeting, 1

10.1021/nn1017582

10.1109/LED.2010.2070832

10.1109/LED.2011.2163613

10.1063/1.3699369

banerjee, 2012, Improved resistive switching memory characteristics using core-shell IrO <formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula> nano-dots in Al<formula formulatype="inline"><tex Notation="TeX">$_2$</tex> </formula>O<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>/WO<formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex> </formula> bilayer structure, J Electrochem Soc, 159, 177h, 10.1149/2.067202jes

10.1063/1.3642961

10.1088/0957-4484/22/25/254010

sze, 0, Physics of Semiconductor Devices

10.1109/LED.2010.2091489

10.1143/JJAP.46.2175

10.1109/LED.2010.2081658

10.1063/1.3624472

10.1109/LED.2011.2148689

10.1109/LED.2009.2036276

10.1063/1.3231872

10.1109/LED.2010.2095820

10.1063/1.3481076

prakash, 2012, Improvement of uniformity of resistive switching parameters by selecting the electroformation polarity in IrO <formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula>/TaO<formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula> /WO<formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula>/W structure, Jpn J Appl Phys Part 1, 51, 4dd06-1

ho, 2010, 9-nm half-pitch functional resistive memory cell with &#60;1�?A programming current using thermally oxidized sub-stoichiometric WO <formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula> film, Proc IEEE Int Electron Devices Meeting, 19.11.11

10.1088/0957-4484/23/49/495707

10.1109/IEDM.2010.5703391

park, 2011, Quantized conductive filament formed by limited Cu source in sub-5-nm era, Proc IEEE Int Electron Devices Meeting, 3.7.1

10.1088/0957-4484/21/33/339803

govoreanu, 2011, 10 � 10nm<formula formulatype="inline"><tex Notation="TeX">$^{2}$</tex></formula> Hf/HfO <formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula> crossbar resistive RAM with excellent performance, reliability and low-energy operation, Proc IEEE Int Electron Devices Meeting, 31.36.31

10.1038/nnano.2008.160

10.1109/LED.2011.2109032

10.1016/S1369-7021(08)70119-6

10.1109/LED.2011.2166371

10.1002/adma.200900375

wu, 2011, Low-power TiN/Al<formula formulatype="inline"><tex Notation="TeX">$_2$</tex></formula>O <formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>/Pt resistive switching device with sub-20�?A switching current and gradual resistance modulation, J Appl Phys, 110, 94104-1, 10.1063/1.3657938

10.1016/j.sse.2012.05.028

10.1186/1556-276X-7-194

10.1021/nn305510u

lee, 2011, A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta<formula formulatype="inline"><tex Notation="TeX"> $_{2}$</tex></formula>O<formula formulatype="inline"><tex Notation="TeX">$_{5-x}$</tex></formula>/TaO<formula formulatype="inline"> <tex Notation="TeX">$_{2-x}$</tex></formula> bilayer structures, Nat Mater, 10, 625, 10.1038/nmat3070

10.1063/1.3696672

10.1063/1.3524521

prakash, 2013, Improved resistance memory characteristics and switching mechanism using TiN electrode on TaO <formula formulatype="inline"><tex Notation="TeX">$_{x}$</tex></formula>/W structure, Proc Winter Simul Conf, 136

10.1002/adma.201104104

10.1109/LED.2013.2243814

10.1038/nnano.2009.456